X-On Electronics has gained recognition as a prominent supplier of NTD3055L104T4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD3055L104T4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD3055L104T4G ON Semiconductor

NTD3055L104T4G electronic component of ON Semiconductor
NTD3055L104T4G ON Semiconductor
NTD3055L104T4G MOSFETs
NTD3055L104T4G  Semiconductors

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See Product Specifications
Part No. NTD3055L104T4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET 60V 12A N-Channel
Datasheet: NTD3055L104T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3196 ea
Line Total: USD 0.32 
Availability - 1050
Ship by Mon. 28 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9700
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2500
Multiples : 2500
2500 : USD 0.4476
5000 : USD 0.4413
7500 : USD 0.4391
10000 : USD 0.435
15000 : USD 0.4328

569
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 1.1842
10 : USD 0.9698
30 : USD 0.6457
100 : USD 0.5098
500 : USD 0.4236
1000 : USD 0.3997

949
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.736
10 : USD 1.2614
24 : USD 0.798
65 : USD 0.7546
500 : USD 0.7252

1050
Ship by Mon. 28 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3196
10 : USD 0.2905
25 : USD 0.2711
50 : USD 0.2614
100 : USD 0.2421

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
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Rise Time
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD3055L104T4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD3055L104T4G and other electronic components in the MOSFETs category and beyond.

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NTD3055L104, NTDV3055L104 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power www.onsemi.com supplies, converters and power motor controls and bridge circuits. Features V R TYP I MAX (BR)DSS DS(on) D Lower R DS(on) 60 V 104 m 12 A Lower V DS(on) Tighter V Specification SD D Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV and STDV Prefixes for Automotive and Other Applications NChannel Requiring Unique Site and Control Change Requirements G AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant S Typical Applications 4 Power Supplies Converters 4 Power Motor Controls Bridge Circuits 1 2 1 2 3 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J DPAK IPAK Rating Symbol Value Unit CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS STYLE 2 STYLE 2 DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR MARKING DIAGRAMS GatetoSource Voltage, Continuous V 15 Vdc GS NonRepetitive (t 10 ms) V 20 & PIN ASSIGNMENTS p GS Drain Current 4 4 Continuous T = 25C I 12 Adc Drain Drain A D Continuous T = 100C I 10 A D I 45 Apk Single Pulse (t 10 s) p DM Total Power Dissipation T = 25C P 48 W A D Derate above 25C 0.32 W/C Total Power Dissipation T = 25C (Note 1) 2.1 W A Total Power Dissipation T = 25C (Note 2) 1.5 W A 2 1 3 Operating and Storage Temperature Range T , T 55 to C Drain J stg Gate Source +175 1 2 3 Gate Drain Source Single Pulse DraintoSource Avalanche E 61 mJ AS Energy Starting T = 25C J A = Assembly Location* (V = 25 Vdc, V = 5.0 Vdc, L = 1.0 mH DD GS 55L104 = Device Code I = 11 A, V = 60 Vdc) L(pk) DS Y = Year Thermal Resistance, JunctiontoCase R 3.13 C/W JC WW = Work Week JunctiontoAmbient (Note 1) R 71.4 JA G = PbFree Package JunctiontoAmbient (Note 2) R 100 JA * The Assembly Location code (A) is front side Maximum Lead Temperature for Soldering T 260 C L optional. In cases where the Assembly Location is Purposes, 1/8 from case for 10 seconds stamped in the package, the front side assembly Stresses exceeding those listed in the Maximum Ratings table may damage the code may be blank. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, ORDERING INFORMATION 2 (Cu Area 1.127 in ). See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 10 NTD3055L104/D AYWW 55L 104G AYWw 55L 104GNTD3055L104, NTDV3055L104 2. When surface mounted to an FR4 board using the minimum recommended 2 pad size, (Cu Area 0.412 in ). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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