NTD4969N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features NTD4969N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.7 C/W JC JunctiontoTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.6 JA JunctiontoAmbient Steady State (Note 4) R 108.6 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.5 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 6.9 9.0 DS(on) GS D I = 15 A 6.9 D m V = 4.5 V I = 30 A 13.6 19 GS D I = 15 A 13.2 D Forward Transconductance g V = 1.5 V, I = 30 A 36 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 837 ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 15 V 347 pF OSS GS DS Reverse Transfer Capacitance C 180 RSS Total Gate Charge Q 9.0 G(TOT) Threshold Gate Charge Q 1.42 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 2.8 GS GatetoDrain Charge Q 4.8 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 d(ON) Rise Time t 27 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 13.3 d(OFF) Fall Time t 6.4 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.