X-On Electronics has gained recognition as a prominent supplier of NTD4979N-35G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4979N-35G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD4979N-35G ON Semiconductor

NTD4979N-35G electronic component of ON Semiconductor
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Part No.NTD4979N-35G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: N-Channel 30 V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK
Datasheet: NTD4979N-35G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 2175
Multiples : 1
2175 : USD 0.2961
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Obsolete
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MOQ : 750
Multiples : 750
750 : USD 0.5829
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Obsolete
0
MOQ : 2325
Multiples : 2325
2325 : USD 0.3294
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.7107
75 : USD 0.4956
525 : USD 0.4255
1050 : USD 0.3726
2175 : USD 0.3439
4350 : USD 0.3289
10875 : USD 0.3289
26100 : USD 0.3174
N/A

Obsolete
0
MOQ : 2175
Multiples : 2175
2175 : USD 0.2826
N/A

Obsolete
   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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We are delighted to provide the NTD4979N-35G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4979N-35G and other electronic components in the MOSFETs category and beyond.

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NTD4979N Power MOSFET 30 V, 41 A, Single NChannel, DPAK/IPAK Features Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTD4979N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit C/W Junction toCase (Drain) R 5.7 JC Junction toTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.6 JA JunctiontoAmbient Steady State (Note 4) R 108.6 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 17 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 4.5 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 V I = 30 A 6.9 9.0 DS(on) GS D I = 15 A 6.9 D m V = 4.5 V I = 30 A 13.6 19 GS D I = 15 A 13.2 D Forward Transconductance g V = 1.5 V, I = 30 A 36 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 837 ISS Output Capacitance C 347 V = 0 V, f = 1.0 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 180 RSS Total Gate Charge Q 9.0 G(TOT) Threshold Gate Charge Q 1.42 G(TH) V = 4.5 V, V = 15 V, I = 30 A nC GS DS D GatetoSource Charge Q 2.8 GS GatetoDrain Charge Q 4.8 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.5 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 10 d(ON) Rise Time t 27 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G Turn Off Delay Time t 13.3 d(OFF) Fall Time t 6.4 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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