X-On Electronics has gained recognition as a prominent supplier of NTJD4152PT2G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD4152PT2G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTJD4152PT2G ON Semiconductor

NTJD4152PT2G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTJD4152PT2G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PFET SC88 20V 88MA 2
Datasheet: NTJD4152PT2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.44 ea
Line Total: USD 0.44 
Availability - 7205
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7205
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.44
10 : USD 0.2981
100 : USD 0.1573
1000 : USD 0.1485
3000 : USD 0.1232
9000 : USD 0.1089

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTJD4152PT2G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4152PT2G and other electronic components in the MOSFETs category and beyond.

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NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low R Performance DS(ON) Small Footprint Package (SC706 Equivalent) V R Typ I Max (BR)DSS DS(on) D ESD Protected Gate 215 m 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique 20 V 0.88 A Site and Control Change Requirements AECQ101 Qualified and 345 m 2.5 V PPAP Capable 600 m 1.8 V These are PbFree Devices Applications Load/Power Management S 1 6 D Charging Circuits 1 1 Load Switching Cell Phones, Computing, Digital Cameras, MP3s and PDAs G 2 5 G 1 2 MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit D 3 4 S 2 2 DraintoSource Voltage V 20 V DSS GatetoSource Voltage V 12 V GS Top View Continuous Drain Steady T = 25C I 0.88 A A D Current (Note 1) State T = 85C 0.63 A MARKING DIAGRAM & Power Dissipation Steady T = 25C P 0.272 W A D PIN ASSIGNMENT (Note 1) State T = 85C 0.141 A D1 G2 S2 T = 25C 1.0 Continuous Drain t 5 s I A A D 6 1 Current (Note 2) T = 85C 0.72 A SC88/SOT363 XXX M Power Dissipation t 5 s T = 25C P 0.35 W CASE 419B A D (Note 2) STYLE 26 T = 85C 0.181 A 1 Pulsed Drain Current t 10 s I 3.0 A S1 G1 D2 DM Operating Junction and Storage Temperature T , 55 to J C XXX = Device Code T 150 STG M = Date Code = PbFree Package Continuous Source Current (Body Diode) I 0.48 A S (Note: Microdot may be in either location) Lead Temperature for Soldering Purposes 260 C T L (1/8 from case for 10 s) THERMAL RESISTANCE RATINGS (Note 1) ORDERING INFORMATION See detailed ordering and shipping information in the package Parameter Symbol Max Unit dimensions section on page 5 of this data sheet. JunctiontoAmbient Steady State R 460 C/W JA JunctiontoAmbient t 5 s R 357 JA JunctiontoLead Steady State R 226 JL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces), steady state. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 6 NTJD4152P/DNTJD4152P, NVJD4152P 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces), t 5 s. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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