X-On Electronics has gained recognition as a prominent supplier of NTJD4158CT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD4158CT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the NTJD4158CT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4158CT1G and other electronic components in the MOSFETs category and beyond.
NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low R Performance DS(on) ESD Protected Gate V R Typ I Max (BR)DSS DS(on) D SC88 Package for Small Footprint (2 x 2 mm) 1.0 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique NCh 0.25 A 30 V Site and Control Change Requirements AECQ101 Qualified and 1.5 2.5 V PPAP Capable 215 m 4.5 V PCh 0.88 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 20 V 345 m 2.5 V Compliant Applications SC88 (SOT363) DCDC Conversion (6Leads) Load/Power Management Load Switch S 1 6 D 1 1 Cell Phones, MP3s, Digital Cameras, PDAs G 2 5 G MAXIMUM RATINGS (T = 25C unless otherwise noted) 1 2 J Parameter Symbol Value Unit DraintoSource Voltage V V NCh 30 DSS D 3 4 S 2 2 PCh 20 GatetoSource Voltage NCh V 20 V GS (Top View) PCh 12 MARKING DIAGRAM & NChannel T = 25C I 0.25 A D A Steady Continuous Drain PIN ASSIGNMENT State T = 85C 0.18 Current (Note 1) A D1 G2 S2 6 PChannel T = 25C 0.88 A Steady Continuous Drain 1 State XXX M T = 85C 0.63 Current (Note 1) A SC88 (SOT363) Power Dissipation Steady P 0.27 W D T = 25C CASE 419B A (Note 1) State 1 STYLE 26 S1 G1 D2 Pulsed Drain Cur- NCh I 0.5 A DM rent tp = 10 s PCh 3.0 XXX = Specific Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J stg = PbFree Package 150 (Note: Microdot may be in either location) Source Current (Body Diode) I A NCh 0.25 S PCh 0.48 ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L See detailed ordering and shipping information in the package (1/8 from case for 10 s) dimensions section on page 7 of this data sheet. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 460 C/W JA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 6 NTJD4158C/DNTJD4158C, NVJD4158C 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). www.onsemi.com 2
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