X-On Electronics has gained recognition as a prominent supplier of NTLJD3115PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLJD3115PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTLJD3115PT1G ON Semiconductor

NTLJD3115PT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTLJD3115PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PFET 2X2 20V 4.1A 106MOHM
Datasheet: NTLJD3115PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1512 ea
Line Total: USD 453.6 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1512
6000 : USD 0.1512
9000 : USD 0.1512
15000 : USD 0.1512

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5827

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0225
10 : USD 0.9982
30 : USD 0.9812
100 : USD 0.964

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.89
10 : USD 0.891
100 : USD 0.4849
500 : USD 0.3812
1000 : USD 0.2948
3000 : USD 0.2678

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 27
Multiples : 1
27 : USD 0.4437
100 : USD 0.3446
250 : USD 0.3061
500 : USD 0.2999

   
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Continuous Drain Current
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We are delighted to provide the NTLJD3115PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLJD3115PT1G and other electronic components in the MOSFETs category and beyond.

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NTLJD3115P MOSFET Power, Dual, P-Channel, WDFN 2X2 mm -20 V, -4.1 A Features www.onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction V R MAX I MAX (Note 1) (BR)DSS DS(on) D 2x2 mm Footprint Same as SC88 100 m 4.5 V Lowest R Solution in 2x2 mm Package DS(on) 20 V 135 m 2.5 V 4.1 A 1.8 V R Rating for Operation at Low Voltage Gate Drive Logic DS(on) 200 m 1.8 V Level Low Profile (< 0.8 mm) for Easy Fit in Thin Environments S1 S2 Bidirectional Current Flow with Common Source Configuration This is a PbFree Device G1 G2 Applications Optimized for Battery and Load Management Applications in Portable Equipment LiIon Battery Charging and Protection Circuits D1 D2 High Side Load Switch PCHANNEL MOSFET PCHANNEL MOSFET MARKING D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J D1 DIAGRAM Parameter Symbol Value Unit 1 6 WDFN6 JDM DraintoSource Voltage V 20 V DSS 2 5 CASE 506AN 3 4 GatetoSource Voltage V 8.0 V GS Pin 1 JD = Specific Device Code Continuous Drain I A T = 25C 3.3 D Steady A Current (Note 1) M = Date Code State T = 85C 2.4 A = PbFree Package t 5 s T = 25C 4.1 A (Note: Microdot may be in either location) Power Dissipation Steady P 1.5 W D PIN CONNECTIONS (Note 1) State T = 25C A t 5 s 2.3 D1 Continuous Drain I A S1 D1 T = 25C 2.3 A D 1 6 Current (Note 2) T = 85C 1.6 Steady A State G1 Power Dissipation P 0.71 W 2 5 G2 D T = 25C A (Note 2) D2 Pulsed Drain Current t = 10 s I 20 A p DM D2 3 4 S2 Operating Junction and Storage Temperature T , T 55 to C J STG 150 (Top View) Source Current (Body Diode) (Note 2) I 1.9 A S ORDERING INFORMATION Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the NTLJD3115PT1G WDFN6 3000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq NTLJD3115PTAG WDFN6 3000/Tape & Reel 2 oz including traces). (PbFree) 2. Surface Mounted on FR4 Board using the minimum recommended pad size 2 For information on tape and reel specifications, of 30 mm , 2 oz Cu. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 7 NTLJD3115P/DNTLJD3115P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit SINGLE OPERATION (SELFHEATED) JunctiontoAmbient Steady State (Note 3) R 83 JA JunctiontoAmbient Steady State Min Pad (Note 4) R 177 C/W JA JunctiontoAmbient t 5 s (Note 3) R 54 JA DUAL OPERATION (EQUALLY HEATED) JunctiontoAmbient Steady State (Note 3) R 58 JA JunctiontoAmbient Steady State Min Pad (Note 4) R 133 C/W JA JunctiontoAmbient t 5 s (Note 3) R 40 JA 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm , 2 oz Cu). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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