NTLUS3A40PZ Power MOSFET 20 V, 9.4 A, Cool Single PChannel, ESD, 2.0x2.0x0.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal NTLUS3A40PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R 72 C/W JA Junction-to-Ambient t 5 s (Note 3) R 33 JA Junction-to-Ambient Steady State min Pad (Note 4) R 189 JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 5.0 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 20 V DS T = 85C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R V = 4.5 V, I = 6.4 A 23 29 m DS(on) GS D V = 2.5 V, I = 4.8 A 31 39 GS D V = 1.8 V, I = 2.5 A 43 60 GS D V = 1.5 V, I = 1.5 A 60 120 GS D Forward Transconductance g V = 15 V, I = 4.0 A 18 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2600 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 200 OSS V = 15 V DS Reverse Transfer Capacitance C 190 RSS Total Gate Charge Q 29 nC G(TOT) Threshold Gate Charge Q 1.4 G(TH) V = 4.5 V, V = 15 V GS DS I = 4.0 A Gate-to-Source Charge Q D 3.7 GS Gate-to-Drain Charge Q 8.1 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) Turn-On Delay Time t 9.0 ns d(ON) Rise Time t 18 r V = 4.5 V, V = 15 V, GS DD I = 4.0 A, R = 1 Turn-Off Delay Time t D G 126 d(OFF) Fall Time t 71 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD T = 25C 0.65 1.0 V J V = 0 V, GS I = 1.0 A S T = 125C 0.55 J Reverse Recovery Time t 25 ns RR Charge Time t 10 a V = 0 V, dis/dt = 100 A/ s, GS I = 1.0 A Discharge Time t S 15 b Reverse Recovery Charge Q 13.6 nC RR 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.