NTLUS3A90PZ MOSFET Power, Single, P-Channel, ESD, Cool, UDFN, 1.6x1.6x0.55 mm -20 V, -5.0 A NTLUS3A90PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R 84 C/W JA Junction-to-Ambient t 5 s (Note 3) R 55 JA Junction-to-Ambient Steady State min Pad (Note 4) 200 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 8.0 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 20 V DS T = 85C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R V = 4.5 V, I = 4.0 A 54 62 m DS(on) GS D V = 2.5 V, I = 2.0 A 74 95 GS D V = 1.8 V, I = 1.2 A 104 140 GS D V = 1.5 V, I = 0.5 A 137 230 GS D Forward Transconductance g V = 10 V, I = 3.0 A 10 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 950 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 90 OSS V = 10 V DS Reverse Transfer Capacitance C 85 RSS nC Total Gate Charge Q 12.3 G(TOT) Threshold Gate Charge Q 0.9 G(TH) V = 4.5 V, V = 10 V GS DS I = 3.0 A Gate-to-Source Charge Q D 1.6 GS Gate-to-Drain Charge Q 3.3 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) ns Turn-On Delay Time t 7.9 d(ON) Rise Time t 15.7 r V = 4.5 V, V = 10 V, GS DD I = 3.0 A, R = 1 Turn-Off Delay Time t D G 34.8 d(OFF) Fall Time t 28.5 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD V T = 25C 0.74 1.2 J V = 0 V, GS I = 1.0 A S T = 125C 0.62 J Reverse Recovery Time t 11.8 ns RR Charge Time t 8.5 a V = 0 V, dis/dt = 100 A/ s, GS I = 1.0 A Discharge Time t S 3.3 b Reverse Recovery Charge Q 6.0 nC RR 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.