X-On Electronics has gained recognition as a prominent supplier of NTLUS3C18PZTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLUS3C18PZTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTLUS3C18PZTAG ON Semiconductor

NTLUS3C18PZTAG electronic component of ON Semiconductor
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Part No.NTLUS3C18PZTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET P-CH 12V 7A 6-Pin UDFN EP
Datasheet: NTLUS3C18PZTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9326 ea
Line Total: USD 0.93 
Availability - 1966
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1966
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9326
10 : USD 0.7762
100 : USD 0.6222
500 : USD 0.5428
1000 : USD 0.4761
3000 : USD 0.4335
9000 : USD 0.4174
24000 : USD 0.4163

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NTLUS3C18PZTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLUS3C18PZTAG and other electronic components in the MOSFETs category and beyond.

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NTLUS3C18PZ MOSFET Power, Single, P-Channel, UDFN, 1.6x1.6x0.5 mm -12 V, -7.0 A www.onsemi.com Features Ultra Low R MOSFET DS(on) UDFN Package with Exposed Drain Pads for Excellent Thermal V R MAX I MAX (BR)DSS DS(on) D Conduction 24 m 4.5 V 7.0 A Low Profile UDFN 1.6 x 1.6 x 0.5 mm for Board Space Saving 27 m 3.7 V 6.6 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 12 V 30 m 3.3 V 6.3 A Compliant 36 m 2.5 V 5.7 A Applications 70 m 1.8 V 4.1 A Optimized for Power Management Applications for Portable Products, Such as Smart Phones and Media Tablets S Battery Switch High Side Load Switch MAXIMUM RATINGS (T = 25C unless otherwise stated) J G Parameter Symbol Value Unit Drain-to-Source Voltage V 12 V DSS Gate-to-Source Voltage V 10 V GS D Continuous Drain Steady I A T = 25C 7.0 A D PChannel MOSFET Current (Note 1) State T = 85C 5.1 A MARKING DIAGRAM t 5 s T = 25C 10.5 A 1 6 Power Dissipa- Steady T = 25C P 1.71 W A D UDFN6 AAM tion (Note 1) State CASE 517AU 1 t 5 s T = 25C 3.83 A AA = Specific Device Code Continuous Drain Steady T = 25C I 4.4 A A D M = Date Code Current (Note 2) State T = 85C 3.1 = PbFree Package A (Note: Microdot may be in either location) Power Dissipation (Note 2) T = 25C P 0.66 W A D Pulsed Drain Current tp = 10 s I 21 A DM PIN CONNECTIONS Operating Junction and Storage T , -55 to C J Temperature T 150 STG Source Current (Body Diode) (Note 2) I 1.7 A S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Top View) 2 of 30 mm , 2 oz. Cu. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 2 NTLUS3C18PZ/DNTLUS3C18PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 72 JA Junction-to-Ambient t 5 s (Note 3) R 32.6 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 190.4 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 12 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 7.3 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 9.6 V DS Gate-to-Source Leakage Current I V = 0 V, V = 10 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 4.5 V, I = 7.0 A 20 24 DS(on) GS D V = 3.7 V, I = 6.6 A 22 27 GS D V = 3.3 V, I = 5.7 A 24 30 GS D V = 2.5 V, I = 5.1 A 29 36 GS D V = 1.8 V, I = 2.0 A 44 70 GS D Forward Transconductance g V = 5 V, I = 7.0 A 21.8 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1570 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 200 OSS V = 6.0 V DS Reverse Transfer Capacitance C 240 RSS Total Gate Charge Q 15.8 nC G(TOT) Threshold Gate Charge Q 0.7 G(TH) V = 4.5 V, V = 6.0 V GS DS I = 7.0 A Gate-to-Source Charge Q D 1.9 GS Gate-to-Drain Charge Q 4.6 GD SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time t 8.5 ns d(ON) Rise Time t 52.5 r V = 4.5 V, V = 6 V, GS DD I = 7.0 A, R = 1 Turn-Off Delay Time t D G 40 d(OFF) Fall Time t 59 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.71 1.0 V SD J V = 0 V, GS I = 1.7 A S T = 125C 0.58 J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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