NTLUS3C18PZ MOSFET Power, Single, P-Channel, UDFN, 1.6x1.6x0.5 mm -12 V, -7.0 A www.onsemi.com Features Ultra Low R MOSFET DS(on) UDFN Package with Exposed Drain Pads for Excellent Thermal V R MAX I MAX (BR)DSS DS(on) D Conduction 24 m 4.5 V 7.0 A Low Profile UDFN 1.6 x 1.6 x 0.5 mm for Board Space Saving 27 m 3.7 V 6.6 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 12 V 30 m 3.3 V 6.3 A Compliant 36 m 2.5 V 5.7 A Applications 70 m 1.8 V 4.1 A Optimized for Power Management Applications for Portable Products, Such as Smart Phones and Media Tablets S Battery Switch High Side Load Switch MAXIMUM RATINGS (T = 25C unless otherwise stated) J G Parameter Symbol Value Unit Drain-to-Source Voltage V 12 V DSS Gate-to-Source Voltage V 10 V GS D Continuous Drain Steady I A T = 25C 7.0 A D PChannel MOSFET Current (Note 1) State T = 85C 5.1 A MARKING DIAGRAM t 5 s T = 25C 10.5 A 1 6 Power Dissipa- Steady T = 25C P 1.71 W A D UDFN6 AAM tion (Note 1) State CASE 517AU 1 t 5 s T = 25C 3.83 A AA = Specific Device Code Continuous Drain Steady T = 25C I 4.4 A A D M = Date Code Current (Note 2) State T = 85C 3.1 = PbFree Package A (Note: Microdot may be in either location) Power Dissipation (Note 2) T = 25C P 0.66 W A D Pulsed Drain Current tp = 10 s I 21 A DM PIN CONNECTIONS Operating Junction and Storage T , -55 to C J Temperature T 150 STG Source Current (Body Diode) (Note 2) I 1.7 A S Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size (Top View) 2 of 30 mm , 2 oz. Cu. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 2 NTLUS3C18PZ/DNTLUS3C18PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 72 JA Junction-to-Ambient t 5 s (Note 3) R 32.6 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 190.4 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 12 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 7.3 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 9.6 V DS Gate-to-Source Leakage Current I V = 0 V, V = 10 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 4.5 V, I = 7.0 A 20 24 DS(on) GS D V = 3.7 V, I = 6.6 A 22 27 GS D V = 3.3 V, I = 5.7 A 24 30 GS D V = 2.5 V, I = 5.1 A 29 36 GS D V = 1.8 V, I = 2.0 A 44 70 GS D Forward Transconductance g V = 5 V, I = 7.0 A 21.8 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 1570 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 200 OSS V = 6.0 V DS Reverse Transfer Capacitance C 240 RSS Total Gate Charge Q 15.8 nC G(TOT) Threshold Gate Charge Q 0.7 G(TH) V = 4.5 V, V = 6.0 V GS DS I = 7.0 A Gate-to-Source Charge Q D 1.9 GS Gate-to-Drain Charge Q 4.6 GD SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time t 8.5 ns d(ON) Rise Time t 52.5 r V = 4.5 V, V = 6 V, GS DD I = 7.0 A, R = 1 Turn-Off Delay Time t D G 40 d(OFF) Fall Time t 59 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.71 1.0 V SD J V = 0 V, GS I = 1.7 A S T = 125C 0.58 J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2