X-On Electronics has gained recognition as a prominent supplier of NTLUS4C12NTBG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLUS4C12NTBG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTLUS4C12NTBG ON Semiconductor

NTLUS4C12NTBG electronic component of ON Semiconductor
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Part No.NTLUS4C12NTBG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET COMP UDFN6 30V 10.7A 9MOH
Datasheet: NTLUS4C12NTBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8511 ea
Line Total: USD 1.85 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.8511
10 : USD 0.9006
100 : USD 0.5086
500 : USD 0.4135
1000 : USD 0.3409
3000 : USD 0.313
6000 : USD 0.3024

   
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We are delighted to provide the NTLUS4C12NTBG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLUS4C12NTBG and other electronic components in the MOSFETs category and beyond.

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NTLUS4C12N MOSFET Power, Single, N-Channel, Cool, UDFN6, 2.0x2.0x0.55 mm 30 V, 10.7 A www.onsemi.com Features MOSFET Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving with Exposed Drain Pads for Excellent Thermal Conduction V R MAX I MAX (BR)DSS DS(on) D Ultra Low R to Reduce Conduction Losses DS(on) 9 m 10 V Optimized Gate Charge to Reduce Switching Losses 12 m 4.5 V 30 V 10.7 A Low Capacitance to Minimize Driver Losses 15 m 3.7 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 19 m 3.3 V Compliant Applications D Power Load Switch Synch DCDC Converters Wireless Charging Circuit G MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S Drain-to-Source Voltage V 30 V DSS NCHANNEL MOSFET Gate-to-Source Voltage V 20 V GS S MARKING DIAGRAM Continuous Drain Steady I A T = 25C 10.7 A D Current (Note 1) State D 1 T = 85C 7.7 A UDFN6 AGM ( COOL ) t 5 s T = 25C 15.1 A CASE 517BG Pin 1 Power Dissipa- Steady T = 25C P 1.54 W A D AG = Specific Device Code tion (Note 1) State M = Date Code t 5 s T = 25C 3.1 A = PbFree Package Continuous Drain Steady T = 25C I 6.8 A (Note: Microdot may be in either location) A D Current (Note 2) State T = 85C 4.9 A PIN CONNECTIONS Power Dissipation (Note 2) T = 25C P 0.63 W A D Pulsed Drain Current t = 10 s I 43 A p DM MOSFET Operating Junction and Storage T , -55 to C J D 1 6 D Temperature T 150 STG D Source Current (Body Diode) (Note 1) I 1.55 A S D 2 5 D Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) G 3 4 S Stresses exceeding those listed in the Maximum Ratings table may damage the S device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq (Top View) 2 oz including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 1 NTLUS4C12N/DNTLUS4C12N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 81 JA Junction-to-Ambient t 5 s (Note 3) R 40.5 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 200 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 12 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 24 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.3 2.1 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 4.8 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 10 V, I = 9.0 A 7.2 9 DS(on) GS D V = 4.5 V, I = 8.0 A 9.3 12 GS D V = 3.7 V, I = 5.0 A 10.9 15 GS D V = 3.3 V, I = 5.0 A 13 19 GS D Forward Transconductance g V = 15 V, I = 9.0 A 39 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 1172 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 546 OSS V = 15 V DS Reverse Transfer Capacitance C 26 RSS nC Total Gate Charge Q 8.4 G(TOT) Threshold Gate Charge Q 1.1 G(TH) V = 4.5 V, V = 15 V GS DS I = 8.0 A D Gate-to-Source Charge Q 3.0 GS Gate-to-Drain Charge Q 2.2 GD Total Gate Charge Q V = 10 V, V = 15 V 18 nC G(TOT) GS DS I = 9.0 A D SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) ns Turn-On Delay Time t 9.4 d(ON) Rise Time t 15 r V = 4.5 V, V = 15 V, GS DD I = 8.0 A, R = 3 D G Turn-Off Delay Time t 14 d(OFF) Fall Time t 3.5 f SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) ns Turn-On Delay Time t 6.3 d(ON) Rise Time t 14 r V = 10 V, V = 15 V, GS DD I = 9.0 A, R = 3 D G Turn-Off Delay Time t 18 d(OFF) Fall Time t 2.4 f 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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