IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R (SMD version) 3.5 mW DS(on),max I 120 A D Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120N10S4-03 PG-TO263-3-2 4N1003 IPI120N10S4-03 PG-TO262-3-1 4N1003 IPP120N10S4-03 PG-TO220-3-1 4N1003 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I Continuous drain current T =25C, V =10V 120 A D C GS 2) T =100C, V =10V 120 C GS 2) I T =25C 480 Pulsed drain current D,pulse C 2) E I =60A 770 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 120 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 250 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-30IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 0.6 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =180A 2.0 2.7 3.5 GS(th) DS GS D I V =100V, V =0V Zero gate voltage drain current - 0.1 1 A DSS DS GS V =100V, V =0V, DS GS - 10 100 2) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 3.4 3.9 mW DS(on) GS D V =10V, I =100A, GS D - 3.0 3.5 SMD version Rev. 1.0 page 2 2014-06-30