X-On Electronics has gained recognition as a prominent supplier of DMT2004UFG-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT2004UFG-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT2004UFG-7 Diodes Incorporated

DMT2004UFG-7 electronic component of Diodes Incorporated
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Part No.DMT2004UFG-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 8V-24V
Datasheet: DMT2004UFG-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.828 ea
Line Total: USD 0.83 
Availability - 727
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
727
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.828
10 : USD 0.583
100 : USD 0.4002
500 : USD 0.3174
1000 : USD 0.2898
2000 : USD 0.2691
4000 : USD 0.2679

   
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RoHS - XON
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We are delighted to provide the DMT2004UFG-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT2004UFG-7 and other electronic components in the MOSFETs category and beyond.

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DMT2004UFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D Small form factor thermally efficient package enables higher BV R max DSS DS(ON) density end products T = +25C C Occupies just 33% of the board area occupied by SO-8 enabling 5.0m @ V = 10V 70A GS smaller end product 24V 6.5m @ V = 4.5V 60A GS 100% Unclamped Inductive Switch (UIS) Test in Production 10.0m @ V = 2.5V 45A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI3333-8 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminal Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S 8 1 S G 7 2 G 6 3 D D 5 4 D D S Top View Top View Bottom View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT2004UFG-7 2,000/Tape & Reel PowerDI3333-8 DMT2004UFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT2004UFG Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 24 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 70 C Continuous Drain Current (Note 7) V = 10V I A GS D State 55 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 90 A I DM Continuous Source-Drain Diode Current (Note 6) 2.5 A I S Avalanche Current (Note 8) L = 0.1mH 26 A I AS Avalanche Energy (Note 8) L = 0.1mH 36 mJ E AS Thermal Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation 1.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 106 C/W R JA Total Power Dissipation T = +25C P W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W R JA Thermal Resistance, Junction to Case (Note 7) 3.5 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 24 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current (T = +25C) I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 0.55 1.45 V V V = V , I = 250A GS(TH) DS GS D 3.7 5.0 V = 10V, I = 12A GS D Static Drain-Source On-Resistance RDS(ON) 4.5 6.5 m V = 4.5V, I = 12A GS D 7.5 10.0 V = 2.5V, I = 12A GS D 0.65 Diode Forward Voltage V 1.0 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1683 iss V = 15V, V = 0V, DS GS 581 Output Capacitance C pF oss f = 1.0MHz 559 Reverse Transfer Capacitance C rss 1.6 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 29.6 Total Gate Charge (V = 4.5V) Q GS g 53.7 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 9A DD D Gate-Source Charge 4.2 Q gs Gate-Drain Charge 13.4 Q gd 3.9 Turn-On Delay Time t D(ON) 9.6 Turn-On Rise Time t R VDD = 15V, VGS = 10V, ns 30.8 Turn-Off Delay Time t R = 3, I = 9A D(OFF) G D 38.6 Turn-Off Fall Time t F 11.2 Reverse Recovery Time t ns RR I = 1.5A, di/dt = 100A/s F 22.9 Reverse Recovery Charge nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. PowerDI is a registered trademark of Diodes Incorporated. 2 of 7 DMT2004UFG July 2016 Diodes Incorporated www.diodes.com Document number: DS38956 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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