DMT2004UFG
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features and Benefits
Low R ensures on state losses are minimized
DS(ON)
I max
D Small form factor thermally efficient package enables higher
BV R max
DSS DS(ON)
density end products
T = +25C
C
Occupies just 33% of the board area occupied by SO-8 enabling
5.0m @ V = 10V 70A
GS
smaller end product
24V 6.5m @ V = 4.5V 60A
GS
100% Unclamped Inductive Switch (UIS) Test in Production
10.0m @ V = 2.5V 45A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
Case: PowerDI3333-8
(R ) and yet maintain superior switching performance, making it
DS(ON)
Case Material: Molded Plastic,Gree Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminal Connections Indicator: See Diagram
Power Management Functions
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
PowerDI3333-8
D
Pin 1
S
S
8
1
S
G
7
2
G
6
3
D
D
5
4
D
D S
Top View
Top View Bottom View Equivalent Circuit
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT2004UFG-7 2,000/Tape & Reel
PowerDI3333-8
DMT2004UFG-13 3,000/Tape & Reel
PowerDI3333-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT2004UFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 24 V
DSS
Gate-Source Voltage V 12 V
GSS
Steady T = +25C 70
C
Continuous Drain Current (Note 7) V = 10V I A
GS D
State 55
T = +70C
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 90 A
I
DM
Continuous Source-Drain Diode Current (Note 6) 2.5 A
I
S
Avalanche Current (Note 8) L = 0.1mH 26 A
I
AS
Avalanche Energy (Note 8) L = 0.1mH 36 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation 1.2 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) Steady State 106 C/W
R
JA
Total Power Dissipation T = +25C P W
A D
Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W
R
JA
Thermal Resistance, Junction to Case (Note 7) 3.5 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (TA = +25C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage 24 V
BV V = 0V, I = 250A
DSS GS D
1 A
Zero Gate Voltage Drain Current (T = +25C) I V = 20V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 10V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage 0.55 1.45 V
V V = V , I = 250A
GS(TH) DS GS D
3.7 5.0
V = 10V, I = 12A
GS D
Static Drain-Source On-Resistance RDS(ON) 4.5 6.5 m
V = 4.5V, I = 12A
GS D
7.5
10.0 V = 2.5V, I = 12A
GS D
0.65
Diode Forward Voltage V 1.0 V V = 0V, I = 2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance C 1683
iss
V = 15V, V = 0V,
DS GS
581
Output Capacitance C pF
oss
f = 1.0MHz
559
Reverse Transfer Capacitance C
rss
1.6
Gate Resistance
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
29.6
Total Gate Charge (V = 4.5V) Q
GS g
53.7
Total Gate Charge (V = 10V) Q
GS g
nC V = 15V, I = 9A
DD D
Gate-Source Charge 4.2
Q
gs
Gate-Drain Charge 13.4
Q
gd
3.9
Turn-On Delay Time t
D(ON)
9.6
Turn-On Rise Time t
R VDD = 15V, VGS = 10V,
ns
30.8
Turn-Off Delay Time t R = 3, I = 9A
D(OFF) G D
38.6
Turn-Off Fall Time t
F
11.2
Reverse Recovery Time t ns
RR
I = 1.5A, di/dt = 100A/s
F
22.9
Reverse Recovery Charge nC
Q
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
PowerDI is a registered trademark of Diodes Incorporated.
2 of 7
DMT2004UFG July 2016
Diodes Incorporated
www.diodes.com
Document number: DS38956 Rev. 1 - 2