IPG20N10S4L-22A OptiMOS-T2 Power-Transistor Product Summary V 100 V DS 4) R 22 m DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Package Marking IPG20N10S4L-22A PG-TDSON-8-10 4N10L22 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 20 A D C GS 1) one channel active 2) 20 T =100C, V =10V C GS 2) Pulsed drain current I - 80 D,pulse one channel active 2, 4) E I =10A 130 mJ Avalanche energy, single pulse AS D 4) I - 15 A Avalanche current, single pulse AS V Gate source voltage -16V GS Power dissipation P T =25C 60 W tot C one channel active Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2013-03-04 IPG20N10S4L-22A Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---2.5K/W thJC SMD version, device on PCB R minimal footprint - 100 - thJA 2 3) -60 - 6cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D V V =V , I = 25A Gate threshold voltage 1.1 1.6 2.1 GS(th) DS GS D V =100V, V =0V, DS GS 4) I -0.01 1 A Zero gate voltage drain current DSS T =25C j V =100V, V =0V, DS GS - 1 100 2) T =125C j 4) I V =16V, V =0V - - 100 nA Gate-source leakage current GSS GS DS 4) R V =4.5V, I =10A -24 28 m Drain-source on-state resistance DS(on) GS D V =10V, I =17A -20 22 GS D Rev. 1.0 page 2 2013-03-04