X-On Electronics has gained recognition as a prominent supplier of IPG20N10S4L22AATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPG20N10S4L22AATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPG20N10S4L22AATMA1 Infineon

Hot IPG20N10S4L22AATMA1 electronic component of Infineon
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Part No.IPG20N10S4L22AATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFET_75V 120V
Datasheet: IPG20N10S4L22AATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7502 ea
Line Total: USD 0.75 
Availability - 4820
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4820
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7502
10 : USD 0.7188
25 : USD 0.7163
100 : USD 0.6943
250 : USD 0.6924
500 : USD 0.6861
1000 : USD 0.6799
3000 : USD 0.6738

4064
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.353
10 : USD 1.0373
100 : USD 0.8734
250 : USD 0.8679
500 : USD 0.7733
1000 : USD 0.7458
2500 : USD 0.7436
5000 : USD 0.7337

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Height
Length
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IPG20N10S4L22AATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPG20N10S4L22AATMA1 and other electronic components in the MOSFETs category and beyond.

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IPG20N10S4L-22A OptiMOS-T2 Power-Transistor Product Summary V 100 V DS 4) R 22 m DS(on),max I 20 A D Features Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI) Type Package Marking IPG20N10S4L-22A PG-TDSON-8-10 4N10L22 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 20 A D C GS 1) one channel active 2) 20 T =100C, V =10V C GS 2) Pulsed drain current I - 80 D,pulse one channel active 2, 4) E I =10A 130 mJ Avalanche energy, single pulse AS D 4) I - 15 A Avalanche current, single pulse AS V Gate source voltage -16V GS Power dissipation P T =25C 60 W tot C one channel active Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2013-03-04 IPG20N10S4L-22A Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R---2.5K/W thJC SMD version, device on PCB R minimal footprint - 100 - thJA 2 3) -60 - 6cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D V V =V , I = 25A Gate threshold voltage 1.1 1.6 2.1 GS(th) DS GS D V =100V, V =0V, DS GS 4) I -0.01 1 A Zero gate voltage drain current DSS T =25C j V =100V, V =0V, DS GS - 1 100 2) T =125C j 4) I V =16V, V =0V - - 100 nA Gate-source leakage current GSS GS DS 4) R V =4.5V, I =10A -24 28 m Drain-source on-state resistance DS(on) GS D V =10V, I =17A -20 22 GS D Rev. 1.0 page 2 2013-03-04

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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