DMN3009LFV 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits Low R ensures on state losses are minimized I max DS(ON) D BV R max DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C C density end products 5.5m V = 10V 60A GS Occupies just 33% of the board area occupied by SO-8 enabling 30V smaller end product 9.0m V = 4.5V 50A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (Type UX) (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 D S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN3009LFV-7 2,000/Tape & Reel PowerDI3333-8 (Type UX) DMN3009LFV-13 3,000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3009LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 60 C I A Continuous Drain Current (Note 7) V = 10V D GS 50 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 90 A I DM Maximum Continuous Body Diode Forward Current (Note 7) 60 A I S Avalanche Current, L = 0.1mH (Note 8) 33 A I AS Avalanche Energy, L = 0.1mH (Note 8) E 58 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.0 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 126 C/W R JA Total Power Dissipation (Note 6) 2.0 W P D Steady State Thermal Resistance, Junction to Ambient (Note 6) 62 R JA C/W Thermal Resistance, Junction to Case (Note 7) R 3.5 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 24V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 3.5 5.5 V = 10V, I = 30A GS D Static Drain-Source On-Resistance R m DS(ON) 4.6 9.0 V = 4.5V, I = 15A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2,000 pF iss V = 15V, V = 0V, DS GS Output Capacitance C 315 pF oss f = 1MHz Reverse Transfer Capacitance C 247 pF rss Gate Resistance R 2.2 V = 0V, V = 0V, f = 1MHz g DS GS 20 nC Total Gate Charge (V = 4.5V) Q GS g 42 nC Total Gate Charge (V = 10V) Q GS g V = 15V, I = 15A DS D Gate-Source Charge 4.7 nC Q gs Gate-Drain Charge 7.4 nC Q gd Turn-On Delay Time 3.9 ns t D(ON) Turn-On Rise Time t 4.1 ns V = 15V, V = 10V, R DD GS Turn-Off Delay Time t 31 ns R = 3.3, , I = 15A D(OFF) G D Turn-Off Fall Time t 15 ns F Body Diode Reverse Recovery Time t 15 ns RR I = 15A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 6.0 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMN3009LFV March 2017 Diodes Incorporated www.diodes.com Document number: DS38347 Rev. 2 - 2