NTMD5836NL ON Semiconductor

NTMD5836NL Power MOSFET 40 V, Dual NChannel, SOIC8 Features Asymmetrical N Channels NTMD5836NL MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Ch 1 Ch 2 Unit DraintoSource Voltage V 40 40 V DSS GatetoSource Voltage V 20 20 V GS Continuous Drain Current R (Notes 3 and 4) Steady T = 25C I 9.0 5.7 A JA A D State T = 70C 7.2 4.6 A Power Dissipation R (Notes 3 and 4) T = 25C P 1.5 1.5 W JA A D T = 70C 0.9 0.9 A Continuous Drain Current R (Notes 3 and 4) t 10s T = 25C I 11 6.5 A JA A D T = 70C 8.6 4.6 A Power Dissipation R (Notes 3 and 4) T = 25C P 2.1 1.9 W JA A D T = 70C 1.3 1.2 A Pulsed Drain Current t = 10 s I 43 26 A p DM Operating Junction and Storage Temperature T , T 55 to +150 C J STG Source Current (Body Diode) I 10 7.0 A S Single Pulse DraintoSource Avalanche Energy (V = 40 V, V = 10 V, L = 0.1 mH E 76 22 mJ DD GS AS I 39 21 A AS Lead Temperature for Soldering Purposes (1/8 from case for 10s) T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces) 4. Only selected channel is been powered 1W applied on channel 1: T = 1 W * 85C/W + 25C = 110C J THERMAL RESISTANCE RATINGS Parameter Symbol Ch 1 Ch 2 Unit JunctiontoAmbient Steady State (Notes 5 and 7) R 85 86 C/W JA JunctiontoAmbient t 10 s (Notes 5 and 7) R 60 65 JA JunctiontoAmbient Steady State (Notes 5 and 8) 59 R JA JunctiontoAmbient Steady State (Notes 6 and 7) R 136 136 JA 5. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces) 2 6. Surfacemounted on FR4 board using 0.155 in sq (100 mm ) pad size 7. Only selected channel is been powered 1W applied on channel 1: T = 1 W * 85C/W + 25C = 110C J 8. Both channels receive equivalent power dissipation 1 W applied on each channel: T = 2 W * 59C/W + 25C = 143C J