NTMFD4C50NT1G ON Semiconductor

NTMFD4C50N Dual N-Channel Power MOSFET 30 V, High Side 18 A / Low Side 27 A, Dual NChannel SO8FL NTMFD4C50N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage Q1 V 30 V DSS DraintoSource Voltage Q2 V 20 V GatetoSource Voltage Q1 GS GatetoSource Voltage Q2 Continuous Drain Current R (Note 1) T = 25C Q1 I 12 JA A D T = 85C 8.6 A A T = 25C Q2 18 A T = 85C 13 A Power Dissipation T = 25C Q1 P 1.88 W A D R JA (Note 1) Q2 1.97 Continuous Drain Current R 10 s (Note 1) T = 25C Q1 I 18.2 JA A D T = 85C 13.1 A A T = 25C Q2 27.4 A Steady State T = 85C 19.8 A Power Dissipation T = 25C Q1 P 4.37 W A D R 10 s (Note 1) JA Q2 4.6 Continuous Drain Current T = 25C Q1 I 9.1 A D R (Note 2) JA T = 85C 6.6 A A T = 25C Q2 13.7 A T = 85C 9.9 A Power Dissipation T = 25 C Q1 P 1.09 W A D R (Note 2) JA Q2 1.15 Pulsed Drain Current TA = 25C Q1 I 55 A DM tp = 10 s Q2 82 Operating Junction and Storage Temperature T , T 55 to +150 C Q1 J STG Q2 Source Current (Body Diode) Q1 I 4.0 A S Q2 4.2 Drain to Source DV/DT dV/dt 6 V/ns Single Pulse DraintoSource Avalanche Energy I = 18 A Q1 EAS 16 mJ L pk (T = 25C, V = 50 V, V = 10 V, L = 0.1 mH, R = 25 ) J DD GS G I = 29 A Q2 EAS 42 L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm .