NTMFS4921N
Power MOSFET
30 V, 58.5 A, Single NChannel, SO8 FL
Features
Low R to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NTMFS4921N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction toCase (Drain) R 3.25
JC
JunctiontoAmbient Steady State (Note 1) R 58.3
JA
C/W
JunctiontoAmbient Steady State (Note 2) R 144.1
JA
JunctiontoAmbient t 10 sec R 22.3
JA
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surface mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V V = 0 V, I = 13 A, 34
(BR)DSSt GS D(aval)
V
(transient) T = 25C, t = 100 ns
case transient
DraintoSource Breakdown Voltage V / 25
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1
DSS GS J
V = 24 V A
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V V = V , I = 250 A 1.45 1.8 2.5 V
GS(TH) GS DS D
Negative Threshold Temperature Coefficient V /T mV/C
GS(TH) J
DraintoSource On Resistance R V = 10 V to I = 30 A 5.3 6.95
DS(on) GS D
11.5 V
I = 15 A 5.2
D
m
V = 4.5 V I = 30 A 8.6 10.8
GS D
I = 15 A 8.4
D
Forward Transconductance g V = 1.5 V, I = 30 A 54 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 1400
ISS
Output Capacitance C 282
OSS V = 0 V, f = 1 MHz, V = 12 V pF
GS DS
Reverse Transfer Capacitance C 136
RSS
Total Gate Charge Q 10.7 16
G(TOT)
Threshold Gate Charge Q 1.4
G(TH)
V = 4.5 V, V = 15 V; I = 30 A nC
GS DS D
GatetoSource Charge Q 4.1
GS
GatetoDrain Charge Q 3.8
GD
Total Gate Charge Q V = 11.5 V, V = 15 V, 25
G(TOT) GS DS
nC
I = 30 A
D
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 13.3
d(ON)
Rise Time t 38
r
V = 4.5 V, V = 15 V, I = 15 A,
GS DS D
ns
R = 3.0
G
Turn Off Delay Time t 16.6
d(OFF)
Fall Time t 3.8
f
3. Pulse Test: pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.