NTMFS4931N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 246 A Features www.onsemi.com Low R to Improve Conduction and Overall Efficiency DS(on) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D Applications 1.1 m 10 V 30 V 246 A ORing FET, Power Load Switch, Motor Control 1.5 m 4.5 V Refer to Application Note AND8195/D for Mounting Information D (5,6) End Products Motor Control, UPS, FaultTolerant Power Systems, Hot Swap MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit G (4) DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V S (1,2,3) GS Continuous Drain T = 25C I 40 A NCHANNEL MOSFET A D Current R JA T = 100C 25 (Note 1) A MARKING DIAGRAM Power Dissipation T = 25C P 2.74 W A D R (Note 1) JA D Continuous Drain T = 25C I 77 A A D S D 1 Current R 10 s JA S 4931N T = 100C 48 (Note 1) A SO8 FLAT LEAD S AYWZZ CASE 488AA Power Dissipation T = 25C P 10.2 W A D G D R 10 s (Note 1) STYLE 1 JA D Steady State Continuous Drain T = 25C I 23 A A D A = Assembly Location Current R JA T = 100C 15 (Note 2) A Y = Year W = Work Week Power Dissipation T = 25C P 0.95 W A D ZZ = Lot Traceability R (Note 2) JA Continuous Drain T = 25C I 246 A C D Current R JC ORDERING INFORMATION T =100C 156 (Note 1) C Device Package Shipping Power Dissipation T = 25C P 104 W C D R (Note 1) JC NTMFS4931NT1G SO8 FL 1500 / (PbFree) Tape & Reel Pulsed Drain Current T = 25C, t = 10 s I 490 A A p DM NTMFS4931NT3G SO8 FL 5000 / Operating Junction and Storage Temperature T , 55 to C J T +150 (PbFree) Tape & Reel STG Source Current (Body Diode) I 100 A For information on tape and reel specifications, S including part orientation and tape sizes, please Drain to Source DV/DT dV/d 4.4 V/ns t refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2019 Rev. 2 NTMFS4931N/DNTMFS4931N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche E 252 mJ AS Energy (T = 25C, V = 24 V, V = 10 V, J DD GS I = 41 A , L = 0.3 mH, R = 25 ) L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2