NTMFS4933N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 210 A Features Low R to Improve Conduction and Overall Efficiency DS(on) www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D Applications ORing FET, Power Load Switch, Motor Control 1.2 m 10 V 30 V 210 A Refer to Application Note AND8195/D for Mounting Information 2.0 m 4.5 V End Products Server, UPS, FaultTolerant Power Systems, Hot Swap D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 34 A S (1,2,3) A D Current R (Note 1) JA NCHANNEL MOSFET T = 100C 21.5 A Power Dissipation T = 25C P 2.74 W A D MARKING R (Note 1) JA DIAGRAM Continuous Drain T = 25C I 43 A A D D Current R 10 s JA T = 100C 27 (Note 1) A S D 4933N 1 S Power Dissipation T = 25C P 7.3 W A D AYWZZ S R 10 s (Note 1) JA Steady SO8 FLAT LEAD G D State CASE 488AA Continuous Drain T = 25C I 20 A A D D STYLE 1 Current R (Note 2) JA T = 100C 12.5 A A = Assembly Location Power Dissipation T = 25C P 1.06 W A D Y = Year R (Note 2) JA W = Work Week ZZ = Lot Traceability Continuous Drain T = 25C I 210 A C D Current R JC T =100C 132 (Note 1) C Power Dissipation T = 25C P 104 W C D ORDERING INFORMATION R (Note 1) JC Pulsed Drain Current T = 25C, t = 10 s I 400 A Device Package Shipping A p DM Operating Junction and Storage Temperature T , 55 to C NTMFS4933NT1G SO8 FL 1500 / J T +150 STG (PbFree) Tape & Reel Source Current (Body Diode) I 95 A S NTMFS4933NT3G SO8 FL 5000 / (PbFree) Tape & Reel Drain to Source DV/DT dV/d 4.4 V/ns t For information on tape and reel specifications, Single Pulse DraintoSource Avalanche E 504 mJ AS including part orientation and tape sizes, please Energy (T = 25C, V = 24 V, V = 10 V, J DD GS refer to our Tape and Reel Packaging Specifications I = 58 A , L = 0.3 mH, R = 25 ) L pk G Brochure, BRD8011/D. Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: May, 2019 Rev. 9 NTMFS4933N/DNTMFS4933N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 2 (Cu area = 50 mm 1 oz ) www.onsemi.com 2