NTMFS4935N
Power MOSFET
30 V, 93 A, Single NChannel, SO8 FL
Features
Low R to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NTMFS4935N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction toCase (Drain) R 2.6
JC
JunctiontoAmbient Steady State (Note 3) R 47.5
JA
C/W
JunctiontoAmbient Steady State (Note 4) R 134.8
JA
JunctiontoAmbient (t 10 s) (Note 3) R 14.4
JA
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V V = 0 V, I = 19.5 A, 34 V
(BR)DSSt GS D(aval)
(transient) T = 25C, t = 100 ns
case transient
DraintoSource Breakdown Voltage V / 15
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0
DSS GS J
V = 24 V A
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V V = V , I = 250 A 1.2 1.63 2.2 V
GS(TH) GS DS D
Negative Threshold Temperature Coefficient V /T 4.0 mV/C
GS(TH) J
DraintoSource On Resistance R V = 10 V I = 30 A 2.7 3.2
DS(on) GS D
I = 15 A 2.7
D
m
V = 4.5 V I = 30 A 3.7 4.2
GS D
I = 15 A 3.7
D
Forward Transconductance g V = 1.5 V, I = 15 A 32 S
FS DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C 3579 4850
ISS
Output Capacitance C 1264 1710
OSS V = 0 V, f = 1 MHz, V = 15 V pF
GS DS
Reverse Transfer Capacitance C 39 59
RSS
Capacitance Ratio C / V = 0 V, f = 1 MHz, V = 15 V 0.011 0.022
RSS GS DS
C
ISS
Total Gate Charge Q 22
G(TOT)
Threshold Gate Charge Q 5.6
G(TH)
V = 4.5 V, V = 15 V; I = 30 A nC
GS DS D
GatetoSource Charge Q 10.2
GS
GatetoDrain Charge Q 3.0
GD
Total Gate Charge Q V = 10 V, V = 15 V; I = 30 A 49.4 nC
G(TOT) GS DS D
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time t 16.3
d(ON)
Rise Time t 20
r
V = 4.5 V, V = 15 V,
GS DS
ns
I = 15 A, R = 3.0
D G
Turn Off Delay Time t 27.5
d(OFF)
Fall Time t 6.6
f
5. Pulse Test: pulse width 300 s, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.