NTMFS4937NCT3G ON Semiconductor

NTMFS4937N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 70 A Features Low R to Minimize Conduction Losses DS(on) NTMFS4937N 2. Surfacemounted on FR4 board using the minimum recommended pad size. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.9 JC JunctiontoAmbient Steady State (Note 3) R 48 JA C/W JunctiontoAmbient Steady State (Note 4) R 135 JA JunctiontoAmbient (t 10 s) (Note 3) R 14.8 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 15.5 A, 34 V (BR)DSSt GS D(aval) (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 15 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.32 1.63 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 3.2 4.0 DS(on) GS D I = 15 A 3.2 D m V = 4.5 V I = 30 A 4.8 6.0 GS D I = 15 A 4.8 D Forward Transconductance g V = 1.5 V, I = 15 A 37 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2516 ISS Output Capacitance C 840 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 25 RSS Capacitance Ratio C / V = 0 V, V = 15 V, f = 1 MHz 0.010 0.020 RSS GS DS C ISS Total Gate Charge Q 15.9 G(TOT) Threshold Gate Charge Q 4.0 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 7.6 GS GatetoDrain Charge Q 2.2 GD Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 31 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.