NTMFS4983NF Power MOSFET 30 V, 106 A, Single NChannel, SO8 FL Features Integrated Schottky Diode Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R MAX I MAX (BR)DSS DS(ON) D Compliant 2.1 m 10 V 30 V 106 A Applications 3.1 m 4.5 V CPU Power Delivery Synchronous Rectification for DCDC Converters NCHANNEL MOSFET Low Side Switching D (5, 6) Telecom Secondary Side Rectification MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit G DraintoSource Voltage V 30 V DSS (4) GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 30 D A S (1, 2, 3) Current R JA T = 85C 22 (Note 1) A MARKING Power Dissipation T = 25C P 3.13 W A D DIAGRAM R (Note 1) JA D Continuous Drain I A T = 25C 48 A D Current R JA S D T = 85C 34 1 10 sec A S 4983NF Power Dissipation T = 25C P 7.7 W SO8 FLAT LEAD A D S AYWZZ R t 10 sec JA, Steady CASE 488AA G D State STYLE 1 Continuous Drain T = 25C I 22 A D A D Current R JA T = 85C 16 (Note 2) A A = Assembly Location Y = Year Power Dissipation T = 25C P 1.7 W A D W = Work Week R (Note 2) JA ZZ = Lot Traceability Continuous Drain T = 25C I 106 A D C Current R JC T = 85C 76 C (Note 1) Power Dissipation T = 25C P 38 W C D ORDERING INFORMATION R (Note 1) JC Pulsed Drain t =10 s T = 25C I 320 A p A DM Device Package Shipping Current NTMFS4983NFT1G SO8FL 1500 / Current limited by package T = 25C I 100 A A Dmaxpkg (PbFree) Tape & Reel Operating Junction and Storage T , 55 to C J NTMFS4983NFT3G SO8FL 5000 / Temperature T +150 STG (PbFree) Tape & Reel Source Current (Body Diode) I 54 A S For information on tape and reel specifications, Drain to Source dV/dt dV/dt 6 V/ns including part orientation and tape sizes, please Single Pulse DraintoSource Avalanche EAS 101 mJ refer to our Tape and Reel Packaging Specifications Energy (V = 50 V, V = 10 V, I = 45 A , DD GS L pk Brochure, BRD8011/D. L = 0.1 mH, R = 25 G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) *For additional information on our PbFree strategy and soldering details, please download the ON Stresses exceeding those listed in the Maximum Ratings table may damage the Semiconductor Soldering and Mounting Techniques device. If any of these limits are exceeded, device functionality should not be Reference Manual, SOLDERRM/D. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2015 Rev. 4 NTMFS4983NF/DNTMFS4983NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 3.3 JC JunctiontoAmbient Steady State (Note 1) R 40 JA C/W JunctiontoAmbient Steady State (Note 2) R 74 JA JunctiontoAmbient t 10 sec R 16.3 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm . ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1.0 mA 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 10 mA, referenced to 25C 15 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 500 DSS GS J A V = 24 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 1.0 mA 1.2 1.7 2.3 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 10 mA, referenced to 25C 5.0 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 30 A 1.6 2.1 DS(on) GS D I = 15 A 1.6 D m V = 4.5 V I = 30 A 2.5 3.1 GS D I = 15 A 2.5 D Forward Transconductance g V = 1.5 V, I = 15 A 60 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 3250 ISS Output Capacitance C 1340 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 90 RSS Total Gate Charge Q 22.6 G(TOT) Threshold Gate Charge Q 2.9 G(TH) V = 4.5 V, V = 15 V I = 30 A nC GS DS D GatetoSource Charge Q 7.0 GS GatetoDrain Charge Q 6.9 GD Total Gate Charge Q V = 10 V, V = 15 V, 47.9 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 13.5 d(ON) Rise Time t 24.9 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 28.7 d(OFF) Fall Time t 10.7 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2