NTMFS5C430N Power MOSFET 40 V, 1.7 m , 185 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) V R MAX I MAX J (BR)DSS DS(ON) D Parameter Symbol Value Unit 40 V 185 A 1.7 m 10 V DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 185 A C D D (5,6) Current R JC T = 100C 131 (Notes 1, 3) C Steady State Power Dissipation T = 25C P 106 W D C R (Note 1) JC T = 100C 53 C G (4) Continuous Drain I A T = 25C 35 A D Current R JA T = 100C 25 (Notes 1, 2, 3) S (1,2,3) A Steady State Power Dissipation T = 25C P 3.8 W NCHANNEL MOSFET A D R (Notes 1 & 2) JA T = 100C 1.9 A Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM MARKING DIAGRAM Operating Junction and Storage Temperature T , T 55 to C J stg + 175 D 1 S D Source Current (Body Diode) I 102 A S DFN5 S 5C430N Single Pulse DraintoSource Avalanche E 338 mJ AS (SO8FL) AYWZZ S Energy (I = 15 A) L(pk) CASE 488AA G D STYLE 1 D Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) 5C430N = NTMFS5C430N Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week ZZ = Lot Traceability THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase Steady State 1.4 C/W R JC ORDERING INFORMATION See detailed ordering, marking and shipping information in the JunctiontoAmbient Steady State (Note 2) R 40 JA package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 0 NTMFS5C430N/DNTMFS5C430N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 12.8 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.5 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 8.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.4 1.7 m DS(on) GS D Forward Transconductance g V =15 V, I = 50 A 130 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3300 ISS Output Capacitance C 1600 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 45 RSS Total Gate Charge Q V = 10 V, V = 20 V I = 50 A 47 G(TOT) GS DS D Threshold Gate Charge Q 10 G(TH) nC GatetoSource Charge Q 16 GS V = 10 V, V = 20 V I = 50 A GS DS D GatetoDrain Charge Q 7 GD Plateau Voltage V 4.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 13 d(ON) Rise Time t 48 r V = 10 V, V = 20 V, GS DS ns I = 50 A, R = 2.5 D G TurnOff Delay Time t 29 d(OFF) Fall Time t 8 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.83 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.7 J Reverse Recovery Time t 57 RR Charge Time t 30 a ns V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 27 b Reverse Recovery Charge Q 68 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2