NTNS3A91PZ MOSFET Single, P-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 mm NTNS3A91PZ 2. Pulse Test: pulse width 300 s, duty cycle 2%. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 11 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 2.1 mV/C GS(TH) J efficient Drain-to-Source On Resistance R V = 4.5 V, I = 100 mA 1.1 1.6 DS(on) GS D V = 2.5 V, I = 50 mA 1.5 2.4 GS D V = 1.8 V, I = 20 mA 2.0 3.3 GS D V = 1.5 V, I = 10 mA 2.5 4.5 GS D Forward Transconductance g V = 5 V, I = 100 mA 0.41 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.6 1.0 V SD GS S CHARGES & CAPACITANCES pF Input Capacitance C 41 ISS V = 0 V, f = 10 kHz, GS Output Capacitance C 4.6 OSS V = 15 V DS Reverse Transfer Capacitance C 4.1 RSS nC Total Gate Charge Q 1.1 G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 15 V, GS DS I = 200 mA D GatetoSource Charge Q 0.2 GS GatetoDrain Charge Q 0.23 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) ns Turn-On Delay Time t 41 d(ON) Rise Time t 97 r V = 4.5 V, V = 15 V, GS DD I = 200 mA, R = 2 D G Turn-Off Delay Time t 571 d(OFF) Fall Time t 286 f 3. Switching characteristics are independent of operating junction temperatures.