NTR3A30PZ MOSFET Power, Single P-Channel, SOT-23, 2.4 x 2.9 x 1.0 mm -20 V, -5.5 A www.onsemi.com Features Low R Solution in 2.4 mm x 2.9 mm Package DS(on) ESD DiodeProtected Gate V R Max I MAX (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 38 m 4.5 V Compliant 20 V 50 m 2.5 V 5.5 A Applications High Side Load Switch 73 m 1.8 V Battery Switch Optimized for Power Management Applications for Portable Products, such as Smart Phones, Media Tablets, PMP, DSC, GPS, and PChannel MOSFET D 3 Others MAXIMUM RATINGS (T = 25C unless otherwise stated) J G Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS 1 GatetoSource Voltage V 8 V GS Drain Current (Note 1) Steady I A T = 25C 3.0 A D S 2 State Drain Current (Note 1) T = 85C 2.2 A t 5 s T = 25C 5.5 A MARKING DIAGRAM & PIN ASSIGNMENT Power Dissipation T = 25C P W Steady 0.48 A D (Note 1) State Drain 3 t 5 s 1.58 Pulsed Drain Current t = 10 s I 9.1 A p DM TRH M Operating Junction and Storage Temperature T , 55 to C J SOT23 T 150 STG CASE 318 1 2 STYLE 21 ESD HBM, JESD22A114 V 2000 V ESD Gate Source Source Current (Body Diode) (Note 2) I 0.48 A S TRH = Specific Device Code Lead Temperature for Soldering Purposes T 260 C M = Date Code* L (1/8 in from case for 10 s) = PbFree Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending device. If any of these limits are exceeded, device functionality should not be upon manufacturing location. assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit ORDERING INFORMATION JunctiontoAmbient Steady State (Note 1) R 260 C/W JA Device Package Shipping JunctiontoAmbient t 5 s (Note 1) R 79 JA NTR3A30PZT1G SOT23 3000 / Tape & 1. Surfacemounted on FR4 board using 1 in sq. pad size (PbFree) Reel (Cu area = 1.127 in sq. 2 oz including traces). For information on tape and reel specifications, 2. Pulse Test: pulse width 300 ms, duty cycle 2%. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: June, 2019 Rev. 2 NTR3A30PZ/DNTR3A30PZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 10.5 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, 1 A DSS GS T = 25C J V = 20 V DS GatetoSource Leakage Current I V = 0 V, V = 5 V 10 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.4 0.65 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 10.5 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V I = 3 A 31 38 m DS(on) GS D V = 2.5 V I = 2.5 A 36 50 GS D V = 1.8 V I = 1.5 A 51 73 GS D Forward Transconductance g V = 5 V, I = 3 A 30 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1651 pF iss Output Capacitance C V = 0 V, f = 1.0 MHz, V = 15 V 148 oss GS DS Reverse Transfer Capacitance C 129 rss Total Gate Charge Q 17.6 nC G(TOT) Threshold Gate Charge Q 0.7 G(TH) V = 4.5 V, V = 15 V, I = 3 A GS DS D GatetoSource Charge Q 2.4 GS GatetoDrain Charge Q 4.9 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 100 ns d(on) Rise Time t 208 r V = 4.5 V, V = 15 V, GS DS I = 3 A, R = 6.0 D G TurnOff Delay Time t 1043 d(off) Fall Time t 552 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.65 1.0 V SD J V = 0 V, GS I = 0.4 A S T = 125C 0.47 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2