X-On Electronics has gained recognition as a prominent supplier of NTR4003NT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTR4003NT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTR4003NT3G ON Semiconductor

NTR4003NT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTR4003NT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET 30V .56A 1500M
Datasheet: NTR4003NT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0476 ea
Line Total: USD 476 
Availability - 97000
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
97000
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0476
30000 : USD 0.0464
50000 : USD 0.0455
100000 : USD 0.0437
150000 : USD 0.0432
250000 : USD 0.0425

16319
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2586
10 : USD 0.1802
25 : USD 0.1786
100 : USD 0.0935
250 : USD 0.0925
500 : USD 0.0914
1000 : USD 0.0643
3000 : USD 0.0637
6000 : USD 0.0559
15000 : USD 0.0527

9700
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.061
20000 : USD 0.0545
50000 : USD 0.0506

13000
Ship by Tue. 03 Dec to Fri. 06 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1616
50 : USD 0.1324
150 : USD 0.1179
500 : USD 0.1068
2500 : USD 0.098
5000 : USD 0.0936

97000
Ship by Tue. 26 Nov to Mon. 02 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0643
30000 : USD 0.0627
50000 : USD 0.0615
100000 : USD 0.0592
150000 : USD 0.0584

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTR4003NT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4003NT3G and other electronic components in the MOSFETs category and beyond.

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NTR4003N, NVR4003N MOSFET Single, N-Channel, Small Signal, SOT-23 30 V, 0.56 A www.onsemi.com Features Low Gate Voltage Threshold (V ) to Facilitate Drive Circuit GS(TH) V R TYP I MAX (BR)DSS DS(on) D Design Low Gate Charge for Fast Switching 1.0 4.0 V 30 V 0.56 A ESD Protected Gate 1.5 2.5 V SOT23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V NChannel NVR Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 1 Applications Notebooks: Level Shifters 2 Logic Switches Low Side Load Switches MARKING DIAGRAM/ Portable Applications PIN ASSIGNMENT 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 Drain Parameter Symbol Value Unit 1 DraintoSource Voltage V 30 V DSS 2 TR8 M GatetoSource Voltage V 20 V GS SOT23 Continuous Drain Steady T = 25C I 0.5 A A D Current (Note 1) State CASE 318 T = 85C 0.37 A STYLE 21 1 2 Power Dissipation Steady State P 0.69 W Gate Source D (Note 1) TR8 = Specific Device Code Continuous Drain t < 10 s T = 25C I 0.56 A M = Date Code A D Current (Note 1) = PbFree Package T = 85C 0.40 A (Note: Microdot may be in either location) Power Dissipation t < 5 s P 0.83 W D (Note 1) *Date Code orientation and overbar may vary depending upon manufacturing location. Pulsed Drain Current t = 10 s I 1.7 A p DM Operating Junction and Storage Temperature T , 55 to C J 150 ORDERING INFORMATION Tstg Source Current (Body Diode) I 1.0 A S Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L NTR4003NT1G SOT23 3000 / Tape & Reel (1/8 from case for 10 s) (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the NTR4003NT3G SOT23 10,000 / Tape & device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. NVR4003NT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: June, 2019 Rev. 5 NTR4003N/DNTR4003N, NVR4003N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 180 C/W JA JunctiontoAmbient t < 10 s (Note 1) R 150 JA JunctiontoAmbient Steady State (Note 2) R 300 JA 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 2. Surfacemounted on FR4 board using the minimum recommended pad size. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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