X-On Electronics has gained recognition as a prominent supplier of NTR4170NT1G MOSFET across the USA, India, Europe, Australia, and various other global locations. NTR4170NT1G MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NTR4170NT1G ON Semiconductor

NTR4170NT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTR4170NT1G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET NFET SOT23 30V 4A TR
Datasheet: NTR4170NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1848 ea
Line Total: USD 0.92

Availability - 1737
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
11640
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.5004
10 : USD 0.386
25 : USD 0.3754
100 : USD 0.2301
250 : USD 0.2164
500 : USD 0.2142
1000 : USD 0.1416
3000 : USD 0.1215
6000 : USD 0.1048

1737
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1848
50 : USD 0.1482
150 : USD 0.1324
500 : USD 0.1127
3000 : USD 0.1039
6000 : USD 0.0987

101
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.481
10 : USD 0.3692
97 : USD 0.1703
267 : USD 0.1612
1000 : USD 0.156

11640
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 92
Multiples : 1
92 : USD 0.5004

2910
Ship by Thu. 01 Aug to Wed. 07 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.1245
9000 : USD 0.1061

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTR4170NT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4170NT1G and other electronic components in the MOSFET category and beyond.

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NTR4170N MOSFET Power, Single, N-Channel, SOT-23 30 V, 3.1 A Features www.onsemi.com Low R DS(on) Low Gate Charge V R MAX I MAX (BR)DSS DS(on) D Low Threshold Voltage 3.1 A 55 m 10 V Halide Free This is a PbFree Device 30 V 70 m 4.5 V 2.8 A Applications 110 m 2.5 V 2.0 A Power Converters for Portables Battery Management SIMPLIFIED SCHEMATIC NCHANNEL Load/Power Switch D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 12 V GS Continuous Drain Steady 2.4 S Current (Note 1) State T = 25C A t 30 s 3.1 MARKING DIAGRAM/ PIN ASSIGNMENT t 10 s 3.9 I A D 3 3 Steady 1.7 Drain State T = 85C 1 A t 30 s 2.3 TREM 2 t 10 s 2.8 SOT23 Power Dissipation Steady 0.48 CASE 318 1 P W D (Note 1) State STYLE 21 1 2 Gate Source T = 25C A t 30 s 0.82 TRE = Specific Device Code t 10 s P 1.25 D M = Date Code Pulsed Drain Current t =10 s I 8.0 A = PbFree Package p DM (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to J C T 150 stg Source Current (Body Diode) I 0.82 A ORDERING INFORMATION S Lead Temperature for Soldering Purposes 260 Device Package Shipping T C L (1/8 from case for 10 s) NTR4170NT1G SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NTR4170NT3G SOT23 10000/Tape & Reel THERMAL RESISTANCE RATINGS (PbFree) Parameter Symbol Max Unit For information on tape and reel specifications, including part orientation and tape sizes, please JunctiontoAmbient Steady State (Note 1) R 260 C/W JA refer to our Tape and Reel Packaging Specification JunctiontoAmbient t 30 s R 153 Brochure, BRD8011/D. JA JunctiontoAmbient t < 10 s (Note 1) 100 R JA Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2019 Rev. 2 NTR4170N/DNTR4170N 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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