X-On Electronics has gained recognition as a prominent supplier of NTR4170NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTR4170NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTR4170NT1G ON Semiconductor

NTR4170NT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NTR4170NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET NFET SOT23 30V 4A TR
Datasheet: NTR4170NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1887 ea
Line Total: USD 0.94 
Availability - 2008
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
72750
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1189
6000 : USD 0.1171
9000 : USD 0.1138
12000 : USD 0.1113
27000 : USD 0.1068
51000 : USD 0.1053
102000 : USD 0.1038
150000 : USD 0.1021

299730
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1139

11640
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4949
10 : USD 0.3323
25 : USD 0.3264
100 : USD 0.182
250 : USD 0.1725
500 : USD 0.1707
1000 : USD 0.1534
3000 : USD 0.1199
6000 : USD 0.115

2008
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1887
50 : USD 0.1506
150 : USD 0.1343
500 : USD 0.114
3000 : USD 0.1048
6000 : USD 0.0994

2429
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.574
5 : USD 0.4536
50 : USD 0.2632
100 : USD 0.1722
273 : USD 0.1624

72750
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.147
6000 : USD 0.1448
9000 : USD 0.1406
12000 : USD 0.1385
27000 : USD 0.1364

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the NTR4170NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4170NT1G and other electronic components in the MOSFETs category and beyond.

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NTR4170N MOSFET Power, Single, N-Channel, SOT-23 30 V, 3.1 A Features www.onsemi.com Low R DS(on) Low Gate Charge V R MAX I MAX (BR)DSS DS(on) D Low Threshold Voltage 3.1 A 55 m 10 V Halide Free This is a PbFree Device 30 V 70 m 4.5 V 2.8 A Applications 110 m 2.5 V 2.0 A Power Converters for Portables Battery Management SIMPLIFIED SCHEMATIC NCHANNEL Load/Power Switch D MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS G GatetoSource Voltage V 12 V GS Continuous Drain Steady 2.4 S Current (Note 1) State T = 25C A t 30 s 3.1 MARKING DIAGRAM/ PIN ASSIGNMENT t 10 s 3.9 I A D 3 3 Steady 1.7 Drain State T = 85C 1 A t 30 s 2.3 TREM 2 t 10 s 2.8 SOT23 Power Dissipation Steady 0.48 CASE 318 1 P W D (Note 1) State STYLE 21 1 2 Gate Source T = 25C A t 30 s 0.82 TRE = Specific Device Code t 10 s P 1.25 D M = Date Code Pulsed Drain Current t =10 s I 8.0 A = PbFree Package p DM (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to J C T 150 stg Source Current (Body Diode) I 0.82 A ORDERING INFORMATION S Lead Temperature for Soldering Purposes 260 Device Package Shipping T C L (1/8 from case for 10 s) NTR4170NT1G SOT23 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NTR4170NT3G SOT23 10000/Tape & Reel THERMAL RESISTANCE RATINGS (PbFree) Parameter Symbol Max Unit For information on tape and reel specifications, including part orientation and tape sizes, please JunctiontoAmbient Steady State (Note 1) R 260 C/W JA refer to our Tape and Reel Packaging Specification JunctiontoAmbient t 30 s R 153 Brochure, BRD8011/D. JA JunctiontoAmbient t < 10 s (Note 1) 100 R JA Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2019 Rev. 2 NTR4170N/DNTR4170N 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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