X-On Electronics has gained recognition as a prominent supplier of NTS4409NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTS4409NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTS4409NT1G ON Semiconductor

Name: NTS4409NT1G
Brand: ON Semiconductor
SKU: NTS4409NT1G_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

NTS4409NT1G electronic component of ON Semiconductor

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See Product Specifications

Part No.	NTS4409NT1G
Manufacturer:	ON Semiconductor
Category:	MOSFETs
Description:	MOSFET NFET 25V/8V 75mA 350
Datasheet:	NTS4409NT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.255 ea
Line Total: USD 1.27

Availability - 7270
Ship by Thu. 08 May to Tue. 13 May

MOQ: 5 Multiples: 5
Pack Size: 5

NTS4409NT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

7270

Ship by Thu. 08 May to Tue. 13 May

MOQ : 5
Multiples : 5

5 : USD 0.255
50 : USD 0.2064
150 : USD 0.1365
500 : USD 0.1106
3000 : USD 0.1008
6000 : USD 0.0958

2046

Ship by Tue. 29 Apr to Thu. 01 May

MOQ : 1
Multiples : 1

1 : USD 0.644
10 : USD 0.4536
50 : USD 0.3066
100 : USD 0.2604
102 : USD 0.1834

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

750 mA 750 mA

Vds - Drain-Source Breakdown Voltage

25 V 25 V

Rds On - Drain-Source Resistance

350 mOhms 350 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

650 mV 650 mV

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

330 mW (1/3 w) 330 mW (1/3 w)

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SC - 70 - 3 SC - 70 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

4.5 V 4.5 V

Qg - Gate Charge

1.2 nC 1.2 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Height

0.85 mm 0.85 mm

Length

2.1 mm 2.1 mm

Product

Mosfet Small Signal Mosfet Small Signal

Series

Nts4409n Nts4409n

Transistor Type

1 N - Channel 1 N - Channel

Type

Mosfet Mosfet

Width

1.24 mm 1.24 mm

Brand

On Semiconductor On Semiconductor

Forward Transconductance - Min

0.5 S 0.5 S

Cnhts

8541210000 8541210000

Fall Time

41 ns 41 ns

Hts Code

8541210095 8541210095

Mxhts

85412101 85412101

Product Type

Mosfet Mosfet

Rise Time

8.2 ns 8.2 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Typical Turn-Off Delay Time

23 ns 23 ns

Typical Turn-On Delay Time

5 ns 5 ns

Brand Category

ON Semiconductor ON Semiconductor

Notes:- Show Stocked Products With Similar Attributes.

NTS4409NT1G Alternative Parts

We are delighted to provide the NTS4409NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTS4409NT1G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The NTS4409NT1G is an N-channel Enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by ON Semiconductor. It is designed to be used in power switching applications. This device has high current (75mA) and voltage (25V/8V) ratings, making it suitable for a wide variety of applications. It has an optimized gate threshold voltage and low on-state resistance, allowing for low on-state losses and higher efficiency. The 350 mOhms maximum RDS (on) at 10V makes it an ideal choice for many high-performance switched applications. The NTS4409NT1G is packaged in a SOT-23 package, making it suitable for a variety of applications, including industrial, automation, automotive, instrumentation, and consumer electronics.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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FS8
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onsemi / Fairchild
OOF
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Availability	Price	Buy Price	Quantity
7270 Ship by Thu. 08 May to Tue. 13 May MOQ : 5 Multiples : 5	5 : USD 0.255 50 : USD 0.2064 150 : USD 0.1365 500 : USD 0.1106 3000 : USD 0.1008 6000 : USD 0.0958

2046 Ship by Tue. 29 Apr to Thu. 01 May MOQ : 1 Multiples : 1	1 : USD 0.644 10 : USD 0.4536 50 : USD 0.3066 100 : USD 0.2604 102 : USD 0.1834

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