NTUD3174NZ Small Signal MOSFET 20 V, 220 mA, Dual NChannel, 1.0 mm x 1.0 mm SOT963 Package Features NTUD3174NZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction toAmbient Steady State (Note 3) 1000 R C/W JA JunctiontoAmbient t = 5 s (Note 3) 600 3. Surfacemounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Zero Gate Voltage Drain Current T = 25C 50 nA J V = 0 V, V = 5 V GS DS T = 85C 200 I J DSS nA V = 0 V, V = 16 V T = 25C 100 GS DS J GatetoSource Leakage Current I V = 0 V, V = 5.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 100 A 0.52 1.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 2.0 mV/C GS(TH) J DraintoSource On Resistance V = 4.5 V, I = 100 mA 0.75 1.5 GS D V = 2.5 V, I = 50 mA 1.0 2.0 GS D V = 1.8 V, I = 20 mA 1.4 3.0 R GS D DS(ON) V = 1.5 V, I = 10 mA 1.8 4.5 GS D V = 1.2 V, I = 1.0 mA 2.8 GS D Forward Transconductance g V = 5.0 V, I = 125 mA 0.48 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.6 1.0 V SD GS S CAPACITANCES Input Capacitance C 12.5 ISS f = 1.0 MHz, V = 0 V GS Output Capacitance C 3.6 pF OSS V = 15 V DS Reverse Transfer Capacitance C 2.6 RSS SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 16.5 d(ON) Rise Time t 25.5 r V = 4.5 V, V = 10 V, I = 200 mA, GS DD D ns R = 2.0 G Turn Off Delay Time t 142 d(OFF) Fall Time t 80 f 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTUD3174NZT5G SOT963 8000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.