NTZD3158P Small Signal MOSFET 20 V, 430 mA, Dual PChannel with ESD Protection, SOT563 Features NTZD3158P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 18 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.0 A DSS GS J V = 16 V T = 125C 2.0 DS J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.0 V GS(TH) GS DS D Negative Threshold V /T 1.9 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R V = 4.5 V, I = 430 mA 0.5 0.9 DS(on) GS D V = 2.5 V, I = 300 mA 0.6 1.2 GS D V = 1.8 V, I = 150 mA 1.0 2.0 GS D Forward Transconductance g V = 10 V, I = 430 mA 1.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 105 175 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 15 30 OSS V = 16 V DS Reverse Transfer Capacitance C 10 20 RSS Total Gate Charge Q 1.7 2.5 nC G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V, GS DS I = 215 mA D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.4 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 10 ns d(on) Rise Time t 12 r V = 4.5 V, V = 10 V, GS DD I = 215 mA, R = 10 D G Turn Off Delay Time t 35 d(off) Fall Time t 19 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 350 mA S Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 13 ns RR GS SD I = 350 mA S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.
