SQM60030E
www.vishay.com
Vishay Siliconix
Automotive N-Channel 80 V (D-S) 175 C MOSFET
FEATURES
PRODUCT SUMMARY
TrenchFET power MOSFET
V (V) 80
DS
Package with low thermal resistance
R ( ) at V = 10 V 0.0032
DS(on) GS
d
AEC-Q101 qualified
I (A) 120
D
Configuration Single 100 % R and UIS tested
g
Material categorization:
D
TO-263
for definitions of compliance please see
www.vishay.com/doc?99912
G
SS
S
DD
GG
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM60030-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-Source Voltage V 80
DS
V
Gate-Source Voltage V 20
GS
T = 25 C 120
C
a
Continuous Drain Current I
D
T = 125 C 120
C
a
Continuous Source Current (Diode Conduction) I 120 A
S
b
Pulsed Drain Current I 250
DM
Single Pulse Avalanche Current I 70
AS
L = 0.1 mH
Single Pulse Avalanche Energy E 245 mJ
AS
T = 25 C 375
C
b
Maximum Power Dissipation P W
D
T = 125 C 125
C
Operating Junction and Storage Temperature Range T , T -55 to +175 C
J stg
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLLIMITUNIT
c
Junction-to-Ambient PCB Mount R 40
thJA
C/W
Junction-to-Case (Drain) R 0.4
thJC
Notes
a. Package limited.
b. Pulse test; pulse width 300 s, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S15-2916-Rev. A, 14-Dec-15 Document Number: 67284
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SQM60030E
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-Source Breakdown Voltage V V = 0, I = 250 A 80 - -
DS GS D
V
Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3 3.5
GS(th) DS GS D
Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA
GSS DS GS
V = 0 V V = 80 V - - 1
GS DS
Zero Gate Voltage Drain Current I V = 0 V V = 80 V, T = 125 C - - 50 A
DSS GS DS J
V = 0 V V = 80 V, T = 175 C - - 800
GS DS J
a
On-State Drain Current I V = 10 V V 5 V 120 - - A
D(on) GS DS
V = 10 V I = 30 A - 0.0026 0.0032
GS D
a
Drain-Source On-State Resistance R V = 10 V I = 30 A, T = 125 C - - 0.0051
DS(on) GS D J
V = 10 V I = 30 A, T = 175 C - - 0.0062
GS D J
b
Forward Transconductance g V = 15 V, I = 30 A - 105 - S
fs DS D
b
Dynamic
Input Capacitance C - 9500 12 000
iss
Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz33004500 pF
oss GS DS
Reverse Transfer Capacitance C -310400
rss
c
Total Gate Charge Q - 110 165
g
c
Gate-Source Charge Q -3V = 10 V V = 40 V, I = 80 A5- nC
gs GS DS D
c
Gate-Drain Charge Q -15-
gd
Gate Resistance R f = 1 MHz 0.7 1.45 2.2
g
c
Turn-On Delay Time t -19 30
d(on)
c
Rise Time t -13 20
r V = 40 V, R = 0.5
DD L
ns
c I 80 A, V = 10 V, R = 1
Turn-Off Delay Time t -3D GEN g960
d(off)
c
Fall Time t -915
f
b
Source-Drain Diode Ratings and Characteristics
a
Pulsed Current I -- 250 A
SM
Forward Voltage V I = 80 A, V = 0 V - 0.9 1.5 V
SD F GS
Notes
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2916-Rev. A, 14-Dec-15 Document Number: 67284
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000