SQD40P10-40L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition V (V) - 100 DS TrenchFET Power MOSFET R ( ) at V = - 10 V 0.040 DS(on) GS Package with Low Thermal Resistance R ( ) at V = - 4.5 V 0.048 DS(on) GS d AEC-Q101 Qualified I (A) - 38 D 100 % R and UIS Tested Configuration Single g Compliant to RoHS Directive 2002/95/EC S TO-252 G Drain Connected to Tab D GD S P-Channel MOSFET Top View ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD40P10-40L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT V Drain-Source Voltage - 100 DS V V Gate-Source Voltage 20 GS T = 25 C - 38 C I Continuous Drain Current D T = 125 C - 22 C a I Continuous Source Current (Diode Conduction) - 50 A S b I - 150 Pulsed Drain Current DM I Single Pulse Avalanche Current - 44 AS L = 0.1 mH Single Pulse Avalanche Energy E 96 mJ AS T = 25 C 136 C b P W Maximum Power Dissipation D T = 125 C 45 C T , T Operating Junction and Storage Temperature Range - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c R Junction-to-Ambient PCB Mount 50 thJA C/W Junction-to-Case (Drain) R 1.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S11-1559-Rev. B 22-Aug-11 Document Number: 67022 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQD40P10-40L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 100 - - DS GS D V V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.0 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 100 V -- - 1 GS DS I V = 0 V V = - 100 V, T = 125 C Zero Gate Voltage Drain Current -- - 50 A DSS GS DS J V = 0 V V = - 100 V, T = 175 C - - - 250 GS DS J a I V = - 10 V V - 5 V - 30 - - A On-State Drain Current D(on) GS DS V = - 10 V I = - 9.2 A - 0.033 0.040 GS D V = - 10 V I = - 9.2 A, T = 125 C - - 0.074 GS D J a R Drain-Source On-State Resistance DS(on) V = - 10 V I = - 9.2 A, T = 175 C - - 0.093 GS D J V = - 4.5 V I = - 7.7 A - 0.037 0.048 GS D b g V = - 15 V, I = - 9.2 A Forward Transconductance -35 - S fs DS D b Dynamic Input Capacitance C - 4433 5545 iss Output Capacitance C V = 0 V V = - 25 V, f = 1 MHz - 301 380 pF oss GS DS Reverse Transfer Capacitance C - 208 260 rss c Q Total Gate Charge - 96 144 g c Q V = - 10 V V = - 50V, I = - 9.2 A -8.4 - nC Gate-Source Charge gs GS DS D c Q - 23.5 - Gate-Drain Charge gd Gate Resistance R f = 1 MHz 1.5 3.13 4.7 g c t Turn-On Delay Time -11 17 d(on) c t -11 17 Rise Time r V = - 50 V, R = 6.49 DD L ns c I - 7.7 A, V = - 10 V, R = 1.0 D GEN g Turn-Off Delay Time t - 78 117 d(off) c t -15 23 Fall Time f b Source-Drain Diode Ratings and Characteristics a I Pulsed Current - - - 150 A SM Forward Voltage V I = - 7.7 A, V = 0 V -- 0.8 - 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1559-Rev. B 22-Aug-11 Document Number: 67022 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000