SQD50N04-5m6L www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 40 DS Package with low thermal resistance R ( ) at V = 10 V 0.0056 DS(on) GS AEC-Q101 qualified R ( ) at V = 4.5 V 0.0070 DS(on) GS 100 % R and UIS tested g I (A) 50 D Material categorization: Configuration Single for definitions of compliance please see Package TO-252 www.vishay.com/doc 99912 D TO-252TO Drain connected to tab G N-Channel MOSFET S S D G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 50 C Continuous Drain Current I D T = 125 C 45 C a Continuous Source Current (Diode Conduction) I 50 A S b Pulsed Drain Current I 200 DM Single Pulse Avalanche Current I 33 AS L = 0.1 mH Single Pulse Avalanche Energy E 54 mJ AS T = 25 C 71 C b Maximum Power Dissipation P W D T = 125 C 23 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 50 thJA C/W Junction-to-Case (Drain) R 2.1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD50N04-5m6L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT PARAMETER Static V V = 0 V, I = 250 A 40 - - Drain-Source Breakdown Voltage DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D V = 0 V, V = 20 V - - 100 nA Gate-Source Leakage I GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 20 A - 0.0043 0.0056 GS D V = 10 V I = 20 A, T = 125 C - - 0.0094 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 20 A, T = 175 C - - 0.0115 GS D J V = 4.5 V I = 15 A - 0.0057 0.0070 GS D b Forward Transconductance g V = 15 V, I = 15 A - 100 - S fs DS D b Dynamic C - 2850 4000 Input Capacitance iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz360500 pF oss GS DS C -135200 Reverse Transfer Capacitance rss c Total Gate Charge Q -46 75 g c Gate-Source Charge Q -1V = 10 V V = 20 V, I = 50 A0- nC gs GS DS D c Q -8- Gate-Drain Charge gd Gate Resistance R f = 1 MHz 1.3 2.8 4.5 g c t -9 15 Turn-On Delay Time d(on) c Rise Time t -19 30 r V = 20 V, R = 0.4 DD L ns I 50 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -2640 d(off) c t -1015 Fall Time f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 200 A SM Forward Voltage V I = 30 A, V = 0 V - 0.87 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2665-Rev. A, 09-Nov-15 Document Number: 63413 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000