X-On Electronics has gained recognition as a prominent supplier of SQD50N05-11L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQD50N05-11L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQD50N05-11L_GE3 Vishay

SQD50N05-11L_GE3 electronic component of Vishay
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Part No.SQD50N05-11L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 50V 50A 75W AEC-Q101 Qualified
Datasheet: SQD50N05-11L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.7595 ea
Line Total: USD 1.76 
Availability - 5540
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5540
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7595
10 : USD 1.3455
100 : USD 0.9948
500 : USD 0.8372
1000 : USD 0.8222
2000 : USD 0.8222
4000 : USD 0.8222
10000 : USD 0.7889

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Product
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SQD50N05-11L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQD50N05-11L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQD50N05-11L www.vishay.com Vishay Siliconix Automotive N-Channel 50 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 50 DS Package with low thermal resistance R () at V = 10 V 0.011 DS(on) GS 100 % R and UIS tested g R () at V = 4.5 V 0.015 d DS(on) GS AEC-Q101 qualified I (A) 50 D Material categorization: for definitions of compliance please see Configuration Single www.vishay.com/doc 99912 Package TO-252 D TO-252TO Drain connected to tab G S S D N-Channel MOSFET G Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 50 DS V Gate-Source Voltage V 20 GS a T = 25 C 50 C Continuous Drain Current I D T = 125 C 32 C a Continuous Source Current (Diode Conduction) I 50 A S b Pulsed Drain Current I 200 DM Single Pulse Avalanche Current I 22.5 AS L = 0.1 mH Single Pulse Avalanche Energy E 25.3 mJ AS T = 25 C 75 C b Maximum Power Dissipation P W D T = 125 C 25 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 60 thJA C/W Junction-to-Case (Drain) R 2 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. D, 10-Aug-15 Document Number: 72168 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQD50N05-11L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 50 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 50 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 50 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 50 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 45 A - 0.009 0.011 GS D V = 10 V I = 45 A, T = 125 C - - 0.020 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 45 A, T = 175 C - - 0.024 GS D J V = 4.5 V I = 20 A - - 0.015 GS D b Forward Transconductance g V = 15 V, I = 30 A - 58 - S fs DS D b Dynamic Input Capacitance C - 1685 2106 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz345430 pF oss GS DS Reverse Transfer Capacitance C -144180 rss c Total Gate Charge Q -34.6 52 g c Gate-Source Charge Q -5V = 10 V V = 25 V, I = 43 A.59 nC gs GS DS D c Gate-Drain Charge Q -9.114 gd Gate Resistance R f = 1 MHz 0.9 1.8 3.9 g c Turn-On Delay Time t -8.5 13 d(on) c Rise Time t -11.5 18 r V = 25 V, R = 0.6 DD L ns c I 43 A, V = 10 V, R = 1 Turn-Off Delay Time t -2D GEN g2.534 d(off) c Fall Time t -7.512 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 200 A SM Forward Voltage V I = 45 A, V = 0 V - 0.95 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. D, 10-Aug-15 Document Number: 72168 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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