X-On Electronics has gained recognition as a prominent supplier of SQJ463EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ463EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ463EP-T1_GE3 Vishay

SQJ463EP-T1_GE3 electronic component of Vishay
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Part No.SQJ463EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 30A 83W AEC-Q101 Qualified
Datasheet: SQJ463EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4149 ea
Line Total: USD 2.41 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 4.9822
10 : USD 3.2275
100 : USD 2.3235
500 : USD 1.8605
1000 : USD 1.7309
5000 : USD 1.7156

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 1.8812

0
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 2.4149
10 : USD 2.3503
30 : USD 2.3095
100 : USD 2.267

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 6.4927
10 : USD 2.3564
25 : USD 2.2561
100 : USD 1.9954
500 : USD 1.7147
1000 : USD 1.4841
3000 : USD 1.4139
6000 : USD 1.3738

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Product
Brand
Factory Pack Quantity :
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQJ463EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ463EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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5.13 mm SQJ463EP www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition V (V) - 40 DS TrenchFET Power MOSFET R () at V = - 10 V 0.010 DS(on) GS d AEC-Q101 Qualified R () at V = - 4.5 V 0.015 DS(on) GS 100 % R and UIS Tested g I (A) - 30 D Compliant to RoHS Directive 2002/95/EC Configuration Single PowerPAK SO-8L Single S G D 4 G 3 S 2 D S 1 P-Channel MOSFET S ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ463EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 40 DS V Gate-Source Voltage V 20 GS T = 25 C - 30 C a Continuous Drain Current I D T = 125 C - 30 C a Continuous Source Current (Diode Conduction) I - 30 A S b Pulsed Drain Current I - 120 DM Single Pulse Avalanche Current I - 44 AS L = 0.1 mH Single Pulse Avalanche Energy E 97 mJ AS T = 25 C 83 C b Maximum Power Dissipation P W D T = 125 C 28 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C e, f Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 65 thJA C/W Junction-to-Case (Drain) R 1.8 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. e. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-2288-Rev. D, 28-Nov-11 Document Number: 65540 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 6.15 mm SQJ463EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 40 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 40 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 40 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 30 - - A D(on) GS DS V = - 10 V I = - 18 A - 0.008 0.010 GS D V = - 4.5 V I = - 15 A - 0.012 0.015 GS D a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 18 A T = 125 C - 0.013 0.015 GS D J V = - 10 V I = - 18 A T = 175 C - 0.015 0.018 GS D J b Forward Transconductance g V = - 15 V, I = - 18 A - 45 - S fs DS D b Dynamic Input Capacitance C - 4700 5875 iss Output Capacitance C -V = 0 V V = - 20 V, f = 1 MHz630790 pF oss GS DS Reverse Transfer Capacitance C -460575 rss c Total Gate Charge Q - 98 150 g c Gate-Source Charge Q -1V = - 10 V V = - 20 V, I = - 18.6 A4- nC gs GS DS D c Gate-Drain Charge Q -23- gd Gate Resistance R f = 1 MHz 1.4 2.3 3.2 g c Turn-On Delay Time t -21 32 d(on) c Rise Time t -17 26 r V = - 20 V, R = 20 DD L ns c I - 1 A, V = - 10 V, R = 6 D GEN g Turn-Off Delay Time t -121182 d(off) c Fall Time t -5177 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - - 120 A SM Forward Voltage V I = - 4.5 A, V = 0 - - 0.8 - 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2288-Rev. D, 28-Nov-11 Document Number: 65540 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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