X-On Electronics has gained recognition as a prominent supplier of SQJ465EP-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJ465EP-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJ465EP-T1_GE3 Vishay

SQJ465EP-T1_GE3 electronic component of Vishay
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See Product Specifications
Part No.SQJ465EP-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -60V -8A 45W AEC-Q101 Qualified
Datasheet: SQJ465EP-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.242 ea
Line Total: USD 1.24 
Availability - 26212
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.611
6000 : USD 0.611
9000 : USD 0.611

26212
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 1.242
10 : USD 1.0028
100 : USD 0.7314
500 : USD 0.6187
1000 : USD 0.5762
3000 : USD 0.5531
24000 : USD 0.5451

2777
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 1.568
10 : USD 1.358
15 : USD 1.19
41 : USD 1.12
100 : USD 1.092

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQJ465EP-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJ465EP-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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5.13 mm SQJ465EP www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition V (V) - 60 DS TrenchFET Power MOSFET R () at V = - 10 V 0.085 DS(on) GS d AEC-Q101 Qualified R () at V = - 4.5 V 0.115 DS(on) GS 100 % R and UIS Tested g I (A) - 8 D Compliant to RoHS Directive 2002/95/EC Configuration Single PowerPAK SO-8L Single S G D 4 D G 3 S P-Channel MOSFET 2 S 1 S ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ465EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 60 DS V Gate-Source Voltage V 20 GS T = 25 C - 8 C a Continuous Drain Current I D T = 125 C - 8 C a Continuous Source Current (Diode Conduction) I - 8 A S b Pulsed Drain Current I - 25 DM Single Pulse Avalanche Current I - 20 AS L = 0.1 mH Single Pulse Avalanche Energy E 20 mJ AS T = 25 C 45 C b Maximum Power Dissipation P W D T = 125 C 15 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C e, f Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 70 thJA C/W Junction-to-Case (Drain) R 3.3 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. e. See Solder Profile (www.vishay.com/doc 73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S11-1529-Rev. A, 08-Aug-11 Document Number: 67996 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 6.15 mm SQJ465EP www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.5 - 2.0 - 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = - 60 V - - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = - 60 V, T = 125 C - - - 50 A DSS GS DS J V = 0 V V = - 60 V, T = 175 C - - - 150 GS DS J a On-State Drain Current I V = - 10 V V - 5 V - 12 - - A D(on) GS DS V = - 10 V I = - 3.5 A - 0.070 0.085 GS D V = - 4.5 V I = - 2.5 A - 0.090 0.115 GS D a Drain-Source On-State Resistance R DS(on) V = - 10 V I = - 3.5 A, T = 125 C - - 0.143 GS D J V = - 10 V I = - 3.5 A, T = 175 C - - 0.176 GS D J b Forward Transconductance g V = - 15 V, I = - 3.5 A - 10 - S fs DS D b Dynamic Input Capacitance C - 912 1140 iss Output Capacitance C -V = 0 V V = - 30 V, f = 1 MHz100125 pF oss GS DS Reverse Transfer Capacitance C -6075 rss c Total Gate Charge Q - 26.5 40 g c Gate-Source Charge Q -3V = - 10 V V = - 30 V, I = - 5 A.8- nC gs GS DS D c Gate-Drain Charge Q -5.8- gd Gate Resistance R f = 1 MHz 3.5 7.18 10.8 g c Turn-On Delay Time t -11 17 d(on) c Rise Time t -13 20 r V = - 30 V, R = 6 DD L ns c I - 5 A, V = - 10 V, R = 1 D GEN g Turn-Off Delay Time t -3654 d(off) c Fall Time t -812 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- - 25 A SM Forward Voltage V I = - 3 A, V = 0 V - - 0.84 - 1.2 V SD F GS Notes g. Pulse test pulse width 300 s, duty cycle 2 %. h. Guaranteed by design, not subject to production testing. i. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-1529-Rev. A, 08-Aug-11 Document Number: 67996 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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