X-On Electronics has gained recognition as a prominent supplier of SQM100N10-10_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM100N10-10_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM100N10-10_GE3 Vishay

SQM100N10-10_GE3 electronic component of Vishay
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Part No.SQM100N10-10_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 100A 375W AEC-Q101 Qualified
Datasheet: SQM100N10-10_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.619 ea
Line Total: USD 3.62 
Availability - 2845
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2845
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.619
10 : USD 2.497
100 : USD 1.859
250 : USD 1.859
800 : USD 1.54
4800 : USD 1.529

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQM100N10-10_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM100N10-10_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM100N10-10 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) 100 DS Package with Low Thermal Resistance R ( ) at V = 10 V 0.0105 DS(on) GS d AEC-Q101 Qualified R ( ) at V = 4.5 V 0.0120 DS(on) GS 100 % R and UIS Tested g I (A) 100 D Material categorization: Configuration Single For definitions of compliance please see D www.vishay.com/doc 99912 TO-263 G G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM100N10-10-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 100 C Continuous Drain Current I D T = 125 C 70 C a Continuous Source Current (Diode Conduction) I 100 A S b Pulsed Drain Current I 400 DM Single Pulse Avalanche Current I 75 AS L = 0.1 mH Single Pulse Avalanche Energy E 280 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S12-1845-Rev. B, 30-Jul-12 Document Number: 67027 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM100N10-10 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 500 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0070 0.0105 GS D V = 10 V I = 30 A, T = 125 C - - 0.0200 GS D J a R Drain-Source On-State Resistance DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0260 GS D J V = 4.5 V I = 20 A - 0.0080 0.0120 GS D b Forward Transconductance g V = 15 V, I = 30 A - 115 - S fs DS D b Dynamic Input Capacitance C - 6440 8050 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz655820 pF oss GS DS Reverse Transfer Capacitance C -315395 rss c Total Gate Charge Q - 122 185 g c Gate-Source Charge Q -2V = 10 V V = 50 V, I = 85 A3- nC gs GS DS D c Gate-Drain Charge Q -28- gd Gate Resistance R f = 1 MHz 0.70 1.41 2.30 g c Turn-On Delay Time t -13 20 d(on) c Rise Time t -14 21 r V = 50 V, R = 0.6 DD L ns c I 85 A, V = 10 V, R = 2.5 D GEN g Turn-Off Delay Time t -4466 d(off) c Fall Time t -1015 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 400 A SM Forward Voltage V I = 85 A, V = 0 V - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-1845-Rev. B, 30-Jul-12 Document Number: 67027 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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