X-On Electronics has gained recognition as a prominent supplier of SQM120P10_10M1LGE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM120P10_10M1LGE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM120P10_10M1LGE3 Vishay

SQM120P10_10M1LGE3 electronic component of Vishay
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Part No.SQM120P10_10M1LGE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P Ch -100Vds 20Vgs
Datasheet: SQM120P10_10M1LGE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.8867 ea
Line Total: USD 5.89 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 800
Multiples : 800
800 : USD 2.2191
2400 : USD 2.1515

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.641

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 800
Multiples : 800
800 : USD 2.2176
1600 : USD 2.2176
2400 : USD 2.2176

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 5.8867
10 : USD 5.1005
30 : USD 4.6197
100 : USD 4.219

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.6959
10 : USD 2.0505
100 : USD 1.8123
250 : USD 1.7605
500 : USD 1.6777
1000 : USD 1.5431
2500 : USD 1.5431
5000 : USD 1.4499
10000 : USD 1.4188

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4
Multiples : 4
4 : USD 2.1377
10 : USD 1.9934
25 : USD 1.8283
100 : USD 1.6761
250 : USD 1.6426

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Series
Brand
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQM120P10_10M1LGE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM120P10_10M1LGE3 and other electronic components in the MOSFETs category and beyond.

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SQM120P10-10m1L www.vishay.com Vishay Siliconix Automotive P-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) -100 DS Package with low thermal resistance R () at V = -10 V 0.0101 DS(on) GS 100 % R and UIS tested g R () at V = -4.5 V 0.0150 DS(on) GS AEC-Q101 qualified I (A) -120 D Material categorization: Configuration Single for definitions of compliance please see Package TO-263 www.vishay.com/doc 99912 S TO-263 G SS D DD GG Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -100 DS V Gate-Source Voltage V 20 GS a T = 25 C -120 C a Continuous Drain Current I D T = 125 C -78 C a Continuous Source Current (Diode Conduction) I -120 A S b Pulsed Drain Current I -480 DM Single Pulse Avalanche Current I -78 AS L = 0.1 mH Single Pulse Avalanche Energy E 304 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM120P10-10m1L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = -250 A -1.5 -2.0 -2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = -100 V - - -1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = -100 V, T = 125 C - - -50 A DSS GS DS J V = 0 V V = -100 V, T = 175 C - - -500 GS DS J a On-State Drain Current I V = -10 V V -5 V -120 - - A D(on) GS DS V = -10 V I = -30 A - 0.0081 0.0101 GS D V = -10 V I = -30 A, T = 125 C - - 0.0168 GS D J a Drain-Source On-State Resistance R DS(on) V = -10 V I = -30 A, T = 175 C - - 0.0205 GS D J V = -4.5 V I = -20 A - 0.0114 0.0150 GS D b Forward Transconductance g V = -15 V, I = -25 A - 60 - S fs DS D b Dynamic Input Capacitance C - 6750 9000 iss Output Capacitance C -V = 0 V V = -25 V, f = 1 MHz35005000 pF oss GS DS Reverse Transfer Capacitance C -450600 rss c Total Gate Charge Q - 125 190 g c Gate-Source Charge Q -2V = -10 V V = -50 V, I = -70 A5- nC gs GS DS D c Gate-Drain Charge Q -30- gd Gate Resistance R f = 1 MHz 3 6.44 9.7 g c Turn-On Delay Time t -20 30 d(on) c Rise Time t - 100 150 r V = -50 V, R = 0.71 DD L ns I -70 A, V = -10 V, R = 1 c D GEN g Turn-Off Delay Time t -120180 d(off) c Fall Time t -200300 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- -480 A SM Forward Voltage V I = -100 A, V = 0 V - -0.95 -1.5 V SD F GS b Reverse Recovery Time t - 110 - ns rr V = -80 V, I = -50 A, di/dt = 100 A/s R F b Reverse Recovery Charge Q - 385 - nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2463-Rev. A, 19-Oct-15 Document Number: 76943 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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