X-On Electronics has gained recognition as a prominent supplier of SQM40014EM_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM40014EM_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM40014EM_GE3 Vishay

SQM40014EM_GE3 electronic component of Vishay
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Part No.SQM40014EM_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V Vds +/-20V Vgs AEC-Q101 Qualified
Datasheet: SQM40014EM_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.6943 ea
Line Total: USD 3.69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 800
Multiples : 1
800 : USD 2.1671
1000 : USD 2.1567
2000 : USD 2.145
2500 : USD 2.132
3000 : USD 2.1203
4000 : USD 2.1086
5000 : USD 2.0969
10000 : USD 2.0839
20000 : USD 2.0722
50000 : USD 2.0592

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 3.6943
10 : USD 2.873

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 800
Multiples : 800
800 : USD 1.896
2400 : USD 1.872
5600 : USD 1.86
10400 : USD 1.848

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SQM40014EM_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM40014EM_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM40014EM www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % R and UIS tested g AEC-Q101 qualified Material categorization: for definitions of compliance please see SS DD www.vishay.com/doc 99912 GG D Top View PRODUCT SUMMARY V (V) 40 DS G R () at V = 10 V 0.00100 DS(on) GS I (A) 200 D N-Channel MOSFET Configuration Single S Package TO-263-7L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS T = 25 C 200 C a Continuous drain current I D T = 125 C 200 C a Continuous source current (diode conduction) I 200 A S b Pulsed drain current I 260 DM Single pulse avalanche current I 100 AS L = 0.1 mH Single pulse avalanche energy E 500 mJ AS T = 25 C 375 C b Maximum power dissipation P W D T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 0.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S17-0968-Rev. A, 03-Jul-17 Document Number: 77738 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM40014EM www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS A Zero gate voltage drain current I V = 0 V V = 40 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 300 A GS DS J a On-state drain current I V = 10 V V 5 V 100 - - A D(on) GS DS V = 10 V I = 35 A - 0.00084 0.00100 GS D a Drain-source on-state resistance R V = 10 V I = 35 A, T = 125 C - - 0.00140 DS(on) GS D J V = 10 V I = 35 A, T = 175 C - - 0.00164 GS D J b Forward transconductance g V = 15 V, I = 30 A - 196 - S fs DS D b Dynamic Input capacitance C - 11 938 15 525 iss Output capacitance C -V = 0 V V = 25 V, f = 1 MHz11 16314 520 pF oss GS DS Reverse transfer capacitance C -282370 rss c Total gate charge Q - 158 250 g c Gate-source charge Q -4V = 10 V V = 20 V, I = 100 A4- nC gs GS DS D c Gate-drain charge Q -22- gd Gate resistance R f = 1 MHz 2.70 5.44 8.20 g c Turn-on delay time t -16 25 d(on) c Rise time t -10 17 r V = 20 V, R = 0.2 DD L ns c I 100 A, V = 10 V, R = 1 Turn-off delay time t -D GEN g103160 d(off) c Fall time t -6195 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I - - 260 A SM Forward voltage V I = 60 A, V = 0 V - 0.81 1.5 V SD F GS Body diode reverse recovery time t - 165 350 ns rr Body diode reverse recovery charge Q - 530 1100 nC rr I = 30 A, di/dt = 100 A/s F Reverse recovery fall time t -66 - a ns Reverse recovery rise time t -99 - b Body diode peak reverse recovery current I --6.2 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0968-Rev. A, 03-Jul-17 Document Number: 77738 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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