SQM40014EM www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % R and UIS tested g AEC-Q101 qualified Material categorization: for definitions of compliance please see SS DD www.vishay.com/doc 99912 GG D Top View PRODUCT SUMMARY V (V) 40 DS G R () at V = 10 V 0.00100 DS(on) GS I (A) 200 D N-Channel MOSFET Configuration Single S Package TO-263-7L ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS T = 25 C 200 C a Continuous drain current I D T = 125 C 200 C a Continuous source current (diode conduction) I 200 A S b Pulsed drain current I 260 DM Single pulse avalanche current I 100 AS L = 0.1 mH Single pulse avalanche energy E 500 mJ AS T = 25 C 375 C b Maximum power dissipation P W D T = 125 C 125 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 0.4 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S17-0968-Rev. A, 03-Jul-17 Document Number: 77738 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM40014EM www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS A Zero gate voltage drain current I V = 0 V V = 40 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 300 A GS DS J a On-state drain current I V = 10 V V 5 V 100 - - A D(on) GS DS V = 10 V I = 35 A - 0.00084 0.00100 GS D a Drain-source on-state resistance R V = 10 V I = 35 A, T = 125 C - - 0.00140 DS(on) GS D J V = 10 V I = 35 A, T = 175 C - - 0.00164 GS D J b Forward transconductance g V = 15 V, I = 30 A - 196 - S fs DS D b Dynamic Input capacitance C - 11 938 15 525 iss Output capacitance C -V = 0 V V = 25 V, f = 1 MHz11 16314 520 pF oss GS DS Reverse transfer capacitance C -282370 rss c Total gate charge Q - 158 250 g c Gate-source charge Q -4V = 10 V V = 20 V, I = 100 A4- nC gs GS DS D c Gate-drain charge Q -22- gd Gate resistance R f = 1 MHz 2.70 5.44 8.20 g c Turn-on delay time t -16 25 d(on) c Rise time t -10 17 r V = 20 V, R = 0.2 DD L ns c I 100 A, V = 10 V, R = 1 Turn-off delay time t -D GEN g103160 d(off) c Fall time t -6195 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I - - 260 A SM Forward voltage V I = 60 A, V = 0 V - 0.81 1.5 V SD F GS Body diode reverse recovery time t - 165 350 ns rr Body diode reverse recovery charge Q - 530 1100 nC rr I = 30 A, di/dt = 100 A/s F Reverse recovery fall time t -66 - a ns Reverse recovery rise time t -99 - b Body diode peak reverse recovery current I --6.2 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0968-Rev. A, 03-Jul-17 Document Number: 77738 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000