SQM40022EM www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES TO-263 7-Lead TrenchFET power MOSFET Package with low thermal resistance 100 % R and UIS tested g AEC-Q101 qualified Material categorization: S for definitions of compliance please see S D S Drain conntected www.vishay.com/doc 99912 S S to tab G Top View D PRODUCT SUMMARY V (V) 40 DS R ( ) at V = 10 V 0.00163 G DS(on) GS I (A) 150 D Configuration Single N-Channel MOSFET Package TO-263-7L S ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 40 DS V Gate-source voltage V 20 GS a T = 25 C 150 C Continuous drain current I D T = 125 C 125 C a Continuous source current (diode conduction) I 136 A S b Pulsed drain current I 300 DM Single pulse avalanche current I 60 AS L = 0.1 mH Single pulse avalanche energy E 180 mJ AS T = 25 C 150 C b Maximum power dissipation P W D T = 125 C 50 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 1 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S18-0116-Rev. A, 29-Jan-18 Document Number: 77695 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM40022EM www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 40 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS A Zero gate voltage drain current I V = 0 V V = 40 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 300 A GS DS J a On-state drain current I V = 10 V V 5 V 100 - - A D(on) GS DS V = 10 V I = 35 A - 0.00133 0.00163 GS D a Drain-source on-state resistance R V = 10 V I = 35 A, T = 125 C - - 0.00268 DS(on) GS D J V = 10 V I = 35 A, T = 175 C - - 0.00326 GS D J b Forward transconductance g V = 15 V, I = 35 A - 143 - S fs DS D b Dynamic Input capacitance C - 6783 9200 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 1771 2400 pF oss GS DS Reverse transfer capacitance C - 109 150 rss c Total gate charge Q - 106 160 g c Gate-source charge Q V = 10 V V = 20 V, I = 100 A -33 - nC gs GS DS D c Gate-drain charge Q -21 - gd Gate resistance R f = 1 MHz 1.25 2.75 4.35 g c Turn-on delay time t -19 30 d(on) c Rise time t - 194 300 r V = 20 V, R = 0.2 DD L ns c I 100 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -45 70 d(off) c Fall time t -26 40 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I - - 300 A SM Forward voltage V I = 60 A, V = 0 V - 0.83 1.5 V SD F GS Body diode reverse recovery time t - 88 180 ns rr Body diode reverse recovery charge Q - 186 380 nC rr I = 30 A, di/dt = 100 A/s F Reverse recovery fall time t -57 - a ns Reverse recovery rise time t -31 - b Body diode peak reverse recovery current I --4.6 - A RM(REC) Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0116-Rev. A, 29-Jan-18 Document Number: 77695 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000