SQM40N15-38 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 150 DS Definition R ( ) at V = 10 V 0.038 DS(on) GS TrenchFET Power MOSFET R ( ) at V = 6 V 0.040 DS(on) GS Package with Low Thermal Resistance I (A) 40 D d AEC-Q101 Qualified Configuration Single 100 % R and UIS Tested g D Compliant to RoHS Directive 2002/95/EC TO-263 G G D S Top View S N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM40N15-38-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 150 DS V Gate-Source Voltage V 20 GS T = 25 C 40 C Continuous Drain Current I D T = 125 C 23 C a I 100 A Continuous Source Current (Diode Conduction) S b Pulsed Drain Current I 80 DM Single Pulse Avalanche Current I 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 166 C b Maximum Power Dissipation P W D T = 125 C 55 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.9 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. S11-2035-Rev. C, 17-Oct-11 Document Number: 65269 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQM40N15-38 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 150 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 150 V - - 1.0 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 150 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 150 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 15 A - 0.027 0.038 GS D V = 10 V I = 15 A, T = 125 C - - 0.078 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 15 A, T = 175 C - - 0.105 GS D J V = 6 V I = 10 A - 0.030 0.040 GS D b Forward Transconductance g V = 15 V, I = 15 A - 40 - S fs DS D b Dynamic Input Capacitance C - 2710 3390 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz310390 pF oss GS DS Reverse Transfer Capacitance C -130165 rss c Total Gate Charge Q -46 70 g c Gate-Source Charge Q -2V = 10 V V = 75 V, I = 85 A0- nC gs GS DS D c Gate-Drain Charge Q -11- gd Gate Resistance R f = 1 MHz 1 2 3 g c Turn-On Delay Time t -14 21 d(on) c Rise Time t -17 26 r V = 75 V, R = 0.88 DD L ns c I 85 A, V = 10 V, R = 1 D GEN g Turn-Off Delay Time t -2436 d(off) c Fall Time t -914 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 80 A SM Forward Voltage V I = 85 A, V = 0 - 0.95 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2035-Rev. C, 17-Oct-11 Document Number: 65269 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000