SQM50020EL www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 60 DS Package with low thermal resistance R () at V = 10 V 0.0020 DS(on) GS AEC-Q101 qualified R () at V = 4.5 V 0.0025 DS(on) GS I (A) 120 100 % R and UIS tested g D Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D TO-263 G SS S DD GG Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM50020EL-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 120 C a Continuous Drain Current I D T = 125 C 120 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 300 DM Single Pulse Avalanche Current I 75 AS L = 0.1 mH Single Pulse Avalanche Energy E 281 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S15-0517-Rev. A, 13-Mar-15 Document Number: 65377 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM50020EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 60 V - - 1 GS DS A Zero Gate Voltage Drain Current I V = 0 V V = 60 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 1.5 mA GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0016 0.0020 GS D V = 10 V I = 30 A, T = 125 C - - 0.0031 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0037 GS D J V = 4.5 V I = 20 A - 0.0020 0.0025 GS D b Forward Transconductance g V = 15 V, I = 30 A - 164 - S fs DS D b Dynamic Input Capacitance C - 12 060 15 100 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz57507200 pF oss GS DS Reverse Transfer Capacitance C -8601100 rss c Total Gate Charge Q - 128 200 g c Gate-Source Charge Q -3V = 10 V V = 30 V, I = 80 A3- nC gs GS DS D c Gate-Drain Charge Q -11- gd Gate Resistance R f = 1 MHz 0.8 1.68 2.6 g c Turn-On Delay Time t -20 25 d(on) c Rise Time t -15 40 r V = 30 V, R = 0.375 DD L ns I 80 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -65100 d(off) c Fall Time t -1220 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 300 A SM Forward Voltage V I = 80 A, V = 0 V - 0.88 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0517-Rev. A, 13-Mar-15 Document Number: 65377 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000