X-On Electronics has gained recognition as a prominent supplier of SQJQ960EL-T1_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQJQ960EL-T1_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQJQ960EL-T1_GE3 Vishay

SQJQ960EL-T1_GE3 electronic component of Vishay
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Part No.SQJQ960EL-T1_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified
Datasheet: SQJQ960EL-T1_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.97 ea
Line Total: USD 2.97 
Availability - 2230
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 2000
2000 : USD 1.2792
4000 : USD 1.265

1750
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.9989
10 : USD 1.82
25 : USD 1.7666
100 : USD 1.5444
250 : USD 1.5423
500 : USD 1.3592
1000 : USD 1.3112

29
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.8899
10 : USD 1.8405
30 : USD 1.808
100 : USD 1.7757

2230
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.97
10 : USD 2.123
100 : USD 1.551
250 : USD 1.529
500 : USD 1.265
1000 : USD 1.243

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Configuration
Series
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SQJQ960EL-T1_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQJQ960EL-T1_GE3 and other electronic components in the MOSFETs category and beyond.

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8 mm8 mm SQJQ960EL www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PowerPAK 8 x 8L Dual TrenchFET power MOSFET AEC-Q101 qualified D 1 100 % R and UIS tested g Fully lead (Pb)-free device D 2 Material categorization: 1 for definitions of compliance please see G 2 1 www.vishay.com/doc 99912 S 3 1 S 11 4 2 G 2 D 1 D 2 Top View Bottom View PRODUCT SUMMARY V (V) 60 DS G 1 G 2 R ( ) at V = 10 V 0.009 DS(on) GS R ( ) at V = 4.5 V 0.013 DS(on) GS I (A) per leg 63 D Configuration Dual S 1 S 2 Package PowerPAK 8 x 8L N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS a T = 25 C 63 C Continuous drain current I D T = 125 C 36 C a Continuous source current (diode conduction) I 50 A S b Pulsed drain current I 200 DM Single pulse avalanche current I 26 AS L = 0.1 mH Single pulse avalanche energy E 34 mJ AS T = 25 C 71 C b Maximum power dissipation P W D T = 125 C 24 C Operating junction and storage temperature range T , T -55 to +175 J stg C d, e Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-ambient PCB mount R 75 thJA C/W Junction-to-case (drain) R 2.1 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) d. See solder profile (www.vishay.com/doc 73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S17-0463-Rev. A, 27-Mar-17 Document Number: 76020 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 8.1 mm8.1 mm SQJQ960EL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 1.5 2 2.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 20 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 60 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 60 V, T = 175 C - - 150 GS DS J a On-state drain current I V = 10 V V 5 V 40 - - A D(on) GS DS V = 10 V I = 10 A - 0.0070 0.0090 GS D V = 4.5 V I = 7 A - 0.0092 0.0130 GS D a Drain-source on-state resistance R DS(on) V = 10 V I = 10 A, T = 125 C - - 0.0145 GS D J V = 10 V I = 10 A, T = 175 C - - 0.0180 GS D J b Forward transconductance g V = 15 V, I = 10 A - 55 - S fs DS D b Dynamic Input capacitance C - 1560 1950 iss Output capacitance C -V = 0 V V = 25 V, f = 1 MHz771964 pF oss GS DS Reverse transfer capacitance C -87108 rss c Total gate charge Q -19 24 g c Gate-source charge Q -4V = 10 V V = 30 V, I = 10 A- nC gs GS DS D c Gate-drain charge Q -2- gd Gate resistance R f = 1 MHz 0.98 1.6 2.6 g c Turn-on delay time t -10 14 d(on) c Rise time t -3 5 V = 30 V, R = 4 r DD L ns c I 10 A, V = 10 V, R = 1 Turn-off delay time t -2D GEN g228 d(off) c Fall time t -35 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 200 A SM Forward voltage V I = 20 A, V = 0 - 1 1.2 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-0463-Rev. A, 27-Mar-17 Document Number: 76020 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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