X-On Electronics has gained recognition as a prominent supplier of SQM100N04-2m7_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM100N04-2m7_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM100N04-2m7_GE3 Vishay

SQM100N04-2m7_GE3 electronic component of Vishay
SQM100N04-2m7_GE3 Vishay
SQM100N04-2m7_GE3 MOSFETs
SQM100N04-2m7_GE3  Semiconductors

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See Product Specifications
Part No. SQM100N04-2m7_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK
Datasheet: SQM100N04-2m7_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.08 ea
Line Total: USD 3.08 
Availability - 619
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
619
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 3.08
10 : USD 2.563
100 : USD 2.035
250 : USD 1.881
500 : USD 1.705
800 : USD 1.287
4800 : USD 1.276

   
Manufacturer
Product Category
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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We are delighted to provide the SQM100N04-2m7_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM100N04-2m7_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM100N04-2m7 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 40 DS Package with low thermal resistance R () at V = 10 V 0.0027 DS(on) GS 100 % R and UIS tested g I (A) 100 D d Configuration Single AEC-Q101 qualified Package TO-263 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-263 D G SS DD GG N-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 40 DS V Gate-Source Voltage V 20 GS a T = 25 C 100 C Continuous Drain Current I D T = 125 C 98 C a Continuous Source Current (Diode Conduction) I 100 A S b Pulsed Drain Current I 400 DM Single Pulse Avalanche Current I 70 AS L = 0.1 mH Single Pulse Avalanche Energy E 245 mJ AS T = 25 C 157 C b Maximum Power Dissipation P W D T = 125 C 52 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.95 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. B, 10-Aug-15 Document Number: 62769 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM100N04-2m7 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 40 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 40 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 40 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 40 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.00225 0.00270 GS D a Drain-Source On-State Resistance R V = 10 V I = 30 A, T = 125 C - - 0.00440 DS(on) GS D J V = 10 V I = 30 A, T = 175 C - - 0.00540 GS D J b Forward Transconductance g V = 15 V, I = 30 A - 201 - S fs DS D b Dynamic Input Capacitance C - 6325 7910 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz744930 pF oss GS DS Reverse Transfer Capacitance C -314395 rss c Total Gate Charge Q - 95.5 145 g c Gate-Source Charge Q -2V = 10 V V = 20 V, I = 100 A5.5- nC gs GS DS D c Gate-Drain Charge Q -14.7- gd Gate Resistance R f = 1 MHz 0.7 1.48 3.8 g c Turn-On Delay Time t -14 21 d(on) c Rise Time t -11 17 r V = 20 V, R = 0.2 DD L ns c I 100 A, V = 10 V, R = 1 Turn-Off Delay Time t -4D GEN g872 d(off) c Fall Time t -914 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 400 A SM Forward Voltage V I = 30 A, V = 0 - 0.8 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. B, 10-Aug-15 Document Number: 62769 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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