SQM120N03-1m5L Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 30 DS Definition R ( ) at V = 10 V 0.0015 DS(on) GS TrenchFET Power MOSFET R ( ) at V = 4.5 V 0.0020 DS(on) GS Package with Low Thermal Resistance I (A) 120 D 100 % R and UIS Tested g Configuration Single d AEC-Q101 Qualified D Compliant to RoHS Directive 2002/95/EC TO-263 G G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM120N03-1m5L-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS T = 25 C 120 C a Continuous Drain Current I D T = 125 C 120 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 480 DM Single Pulse Avalanche Current I 82 AS L = 0.1 mH Single Pulse Avalanche Energy E 336 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T - 55 to + 175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR-4 material). d. Parametric verification ongoing. Document Number: 67333 www.vishay.com S11-1098-Rev. A, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM120N03-1m5L Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 30 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 30 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 30 V, T = 175 C - - 250 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0014 0.0015 GS D V = 10 V I = 30 A, T = 125 C - - 0.0023 GS D J a Drain-Source On-State Resistance R DS(on) = 10 V I = 30 A, T = 175 C - - 0.0028 V GS D J V = 4.5 V I = 20 A - 0.0016 0.0020 GS D b Forward Transconductance g V = 15 V, I = 30 A - 190 - S fs DS D b Dynamic Input Capacitance C - 12 484 15 605 iss Output Capacitance C -V = 0 V V = 15 V, f = 1 MHz22042755 pF oss GS DS Reverse Transfer Capacitance C -8601075 rss c Total Gate Charge Q - 179 270 g c Gate-Source Charge Q -3V = 10 V V = 10 V, I = 120 A4- nC gs GS DS D c Gate-Drain Charge Q -21- gd R Gate Resistance g f = 1 MHz 0.59 1.19 1.79 c Turn-On Delay Time t -18 27 d(on) c Rise Time t -11 17 r V = 15 V, R = 0.3 DD L ns c I 50 A, V = 10 V, R = 1 Turn-Off Delay Time t -6D GEN g496 d(off) c Fall Time t -1117 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I - - 480 A SM Forward Voltage V I = 60 A, V = 0 V - 0.81 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 67333 2 S11-1098-Rev. A, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000