SQM120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 100 DS Package with low thermal resistance R () at V = 10 V 0.0095 DS(on) GS d AEC-Q101 qualified I (A) 120 D Configuration Single 100 % R and UIS tested g Package TO-263 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-263 D G SS DD GG N-Channel MOSFET S Top View ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS a T = 25 C 120 C Continuous Drain Current I D T = 125 C 73 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 480 DM Single Pulse Avalanche Current I 73 AS L = 0.1 mH Single Pulse Avalanche Energy E 266 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1875-Rev. C, 10-Aug-15 Document Number: 71515 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM120N10-09 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 100 V - - 1 GS DS Zero Gate Voltage Drain Current I V = 0 V V = 100 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 100 V, T = 175 C - - 150 GS DS J a On-State Drain Current I V = 10 V V 5 V 120 - - A D(on) GS DS V = 10 V I = 30 A - 0.0079 0.0095 GS D a Drain-Source On-State Resistance R V = 10 V I = 30 A, T = 125 C - - 0.0190 DS(on) GS D J V = 10 V I = 30 A, T = 175 C - - 0.0250 GS D J b Forward Transconductance g V = 15 V, I = 30 A - 99 - S fs DS D b Dynamic Input Capacitance C - 6915 8645 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz635795 pF oss GS DS Reverse Transfer Capacitance C -280350 rss c Total Gate Charge Q - 120 180 g c Gate-Source Charge Q -3V = 10 V V = 50 V, I = 85 A0- nC gs GS DS D c Gate-Drain Charge Q -28.5- gd Gate Resistance R f = 1 MHz 0.25 0.7 2.3 g c Turn-On Delay Time t -21 32 d(on) c Rise Time t -24 36 r V = 50 V, R = 0.6 DD L ns c I 85 A, V = 10 V, R = 2.5 Turn-Off Delay Time t -5D GEN g 278 d(off) c Fall Time t -1624 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 480 A SM Forward Voltage V I = 85 A, V = 0 - 0.9 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1875-Rev. C, 10-Aug-15 Document Number: 71515 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000