SQM60N20-35 www.vishay.com Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 200 DS Package with low thermal resistance R () at V = 10 V 0.035 DS(on) GS d AEC-Q101 qualified I (A) 60 D Configuration Single 100 % R and UIS tested g Package TO-263 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-263 D G SS DD GG Top View N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 60 C Continuous Drain Current I D T = 125 C 35 C a Continuous Source Current (Diode Conduction) I 120 A S b Pulsed Drain Current I 100 DM Single Pulse Avalanche Current I 26 AS L = 0.1 mH Single Pulse Avalanche Energy E 33 mJ AS T = 25 C 375 C b Maximum Power Dissipation P W D T = 125 C 125 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 0.4 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). d. Parametric verification ongoing. S15-1874-Rev. B, 10-Aug-15 Document Number: 62744 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM60N20-35 www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 200 V - - 1 GS DS A Zero Gate Voltage Drain Current I V = 0 V V = 200 V, T = 125 C - - 75 DSS GS DS J V = 0 V V = 200 V, T = 175 C - - 2 mA GS DS J a On-State Drain Current I V = 10 V V 5 V 60 - - A D(on) GS DS V = 10 V I = 20 A - 0.028 0.035 GS D a Drain-Source On-State Resistance R V = 10 V I = 20 A, T = 125 C - - 0.074 DS(on) GS D J V = 10 V I = 20 A, T = 175 C - - 0.098 GS D J b Forward Transconductance g V = 15 V, I = 20 A - 67 - S fs DS D b Dynamic Input Capacitance C - 4655 5850 iss Output Capacitance C -V = 0 V V = 25 V, f = 1 MHz410550 pF oss GS DS Reverse Transfer Capacitance C -195250 rss c Total Gate Charge Q -90 135 g c Gate-Source Charge Q -1V = 10 V V = 100 V, I = 9 A6- nC gs GS DS D c Gate-Drain Charge Q -29- gd Gate Resistance R f = 1 MHz 0.3 0.8 1.5 g c Turn-On Delay Time t -20 30 d(on) c Rise Time t -40 60 r V = 100 V, R = 11.1 DD L ns c I 9 A, V = 10 V, R = 1 Turn-Off Delay Time t -3D GEN g553 d(off) c Fall Time t -2030 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 100 A SM Forward Voltage V I = 30 A, V = 0 V - 0.8 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1874-Rev. B, 10-Aug-15 Document Number: 62744 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000