SQP10250E www.vishay.com Vishay Siliconix Automotive N-Channel 250 V (D-S) 175 C MOSFET FEATURES TO-220AB TrenchFET power MOSFET Package with low thermal resistance AEC-Q101 qualified 100 % R and UIS tested g Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SS D G D Top View PRODUCT SUMMARY G V (V) 250 DS R ( ) at V = 10 V 0.0300 DS(on) GS R ( ) at V = 7.5 V 0.0320 DS(on) GS N-Channel MOSFET S I (A) 53 D Configuration Single Package TO-220 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 53 C Continuous drain current I D T = 125 C 30 C a Continuous source current (diode conduction) I 120 A S b Pulsed drain current I 180 DM Single pulse avalanche current I 41 AS L = 0.1 mH Single pulse avalanche energy E 84 mJ AS T = 25 C 250 C b Maximum power dissipation P W D T = 125 C 83 C Operating junction and storage temperature range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT c Junction-to-ambient PCB mount R 40 thJA C/W Junction-to-case (drain) R 0.6 thJC Notes a. Package limited b. Pulse test pulse width 300 s, duty cycle 2 % c. When mounted on 1 square PCB (FR4 material) S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SQP10250E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - DS GS D V Gate-source threshold voltage V V = V , I = 250 A 2.5 3.0 3.5 GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 250 V - - 1 GS DS Zero gate voltage drain current I V = 0 V V = 250 V, T = 125 C - - 50 A DSS GS DS J V = 0 V V = 250 V, T = 175 C - - 600 GS DS J a On-state drain current I V = 10 V V 5 V 30 - - A D(on) GS DS V = 10 V I = 15 A - 0.0244 0.0300 GS D V = 7.5 V I = 10 A - 0.0260 0.0320 GS D a Drain-source on-state resistance R DS(on) V = 10 V I = 15 A, T = 125 C - - 0.0641 GS D J V = 10 V I = 15 A, T = 175 C - - 0.0853 GS D J b Forward transconductance g V = 15 V, I = 15 A - 50 - S fs DS D b Dynamic Input capacitance C - 2880 4050 iss Output capacitance C V = 0 V V = 25 V, f = 1 MHz - 1480 2100 pF oss GS DS Reverse transfer capacitance C -58 85 rss c Total gate charge Q -50 75 g c Gate-source charge Q V = 10 V V = 125 V, I = 10 A -12 - nC gs GS DS D c Gate-drain charge Q -15 - gd Gate Resistance R f = 1 MHz 1.40 2.84 4.40 g c Turn-on delay time t -14 30 d(on) c Rise time t -6 15 r V = 125 V, R = 12.5 DD L ns c I 10 A, V = 10 V, R = 1 Turn-off delay time t D GEN g -38 60 d(off) c Fall time t -10 20 f b Source-Drain Diode Ratings and Characteristics a Pulsed current I -- 180 A SM Forward voltage V I = 20 A, V = 0 V - 0.82 1.5 V SD F GS Body diode reverse recovery time t - 155 310 ns rr Body diode reverse recovery charge Q - 933 1900 nC rr I = 10 A, di/dt = 100 A/s F Reverse recovery fall time t - 122 - ns a Reverse recovery rise time t -33 - b Body diode peak reverse recovery I --11.6 - A RM(REC) current Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S18-0262-Rev. A, 05-Mar-18 Document Number: 76717 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000