DMT3009LFVW 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (SWP) (Type UX) Product Summary Features and Benefits Low R Ensures On State Losses Are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C Density End Products 11m V = 10V 50A GS Occupies Just 33% of The Board Area Occupied by SO-8 30V Enabling Smaller End Product 13m V = 4.5V 45A GS Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) An Automotive-Compliant Part is Available Under Separate Datasheet (DMT3009LFVWQ) Description and Applications This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: PowerDI 3333-8 (SWP) (Type UX) Case Material: Molded Plastic,Gree Molding Compound. Backlighting UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) PowerDI3333-8 (SWP) (Type UX) D D D D D G G S S S Pin1 S Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT3009LFVW-7 2,000/Tape & Reel PowerDI3333-8 (SWP) (Type UX) DMT3009LFVW-13 3,000/Tape & Reel PowerDI3333-8 (SWP) (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT3009LFVW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 12 A I A D 10 T = +70C A Continuous Drain Current V = 10V GS T = +25C 50 C A I D 37 T = +70C C Maximum Continuous Body Diode Forward Current (Note 5) I 3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 90 A DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 90 A SM Avalanche Current, L = 0.1mH I 19 A AS Avalanche Energy, L = 0.1mH 19 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.3 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 55 C/W JA Total Power Dissipation (Note 8) 35.7 W T = +25C P C D Thermal Resistance, Junction to Case (Note 8) Steady State 3.5 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 30 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 24V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 1 - 3 V V = V , I = 250A GS(TH) DS GS D - 6.6 11 V = 10V, I = 14.4A GS D Static Drain-Source On-Resistance - 10.5 13 m R V = 4.5V, I = 7A DS(ON) GS D - 13.4 20 V = 3.8V, I = 5A GS D Diode Forward Voltage - 0.8 1.2 V V V = 0V, I = 10A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance - 823 - pF C iss V = 15V, V = 0V, DS GS Output Capacitance - 352 - pF C oss f = 1.0MHz 52 Reverse Transfer Capacitance C - - pF rss Gate Resistance R - 1.2 - V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 4.5V) Q - 5.8 - nC GS g Total Gate Charge (V = 10V) Q - 12 - nC GS g V = 15V, I = 14.4A DS D Gate-Source Charge Q - 1.7 - nC gs Gate-Drain Charge - 2.4 - nC Q gd Turn-On Delay Time - 3.2 - ns t D(ON) Turn-On Rise Time - 5.2 - ns t V = 10V, V = 15V, R GS DD Turn-Off Delay Time - 8.9 - ns R = 1, I = 10A t G D D(OFF) Turn-Off Fall Time - 1.5 - ns t F Body Diode Reverse Recovery Time t - 16.4 - ns RR I = 10A, dI/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 5.9 - nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 2 of 7 DMT3009LFVW August 2018 Diodes Incorporated www.diodes.com Document number: DS39728 Rev. 4 - 2 ADVANCE INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION