DMT2004UFV N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I Max D Small form factor thermally efficient package enables higher BV R Max DSS DS(ON) density end products T = +25C C Occupies just 33% of the board area occupied by SO-8 enabling 5.0m V = 10V 70A GS smaller end product 24V 6.5m V = 4.5V 60A GS 100% Unclamped Inductive Switch (UIS) Test in Production 10.0m V = 2.5V 45A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 3333-8 (Type UX) (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic,Gree Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 S D S S G 8 1 7 2 G 6 3 D 5 4 D D D S Bottom View Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT2004UFV-7 2,000/Tape & Reel PowerDI3333-8 (Type UX) DMT2004UFV-13 3,000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT2004UFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 24 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 70 C Continuous Drain Current (Note 7) V = 10V I A GS D State 55 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 90 A I DM Continuous Source-Drain Diode Current (Note 6) 2.5 A I S Avalanche Current (Note 8) L = 0.1mH 26 A I AS Avalanche Energy (Note 8) L = 0.1mH 36 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 106 C/W R JA Total Power Dissipation (Note 6) T = +25C P 2.3 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 54 C/W R JA Thermal Resistance, Junction to Case (Note 7) 3.5 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 24 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current (T = +25C) I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 0.55 1.45 V V V = V , I = 250A GS(TH) DS GS D 3.8 5.0 V = 10V, I = 12A GS D Static Drain-Source On-Resistance RDS(ON) 4.6 6.5 m V = 4.5V, I = 12A GS D 6.8 10.0 V = 2.5V, I = 12A GS D 0.65 Diode Forward Voltage V 1.0 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1683 iss V = 15V, V = 0V, DS GS 581 Output Capacitance C pF oss f = 1.0MHz 559 Reverse Transfer Capacitance C rss 1.6 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 29.6 Total Gate Charge (V = 4.5V) Q GS g 53.7 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 9A DD D Gate-Source Charge 4.2 Q gs Gate-Drain Charge 13.4 Q gd 3.9 Turn-On Delay Time t D(ON) 9.6 Turn-On Rise Time t R VDD = 15V, VGS = 10V, ns 30.8 Turn-Off Delay Time t R = 3, I = 9A D(OFF) G D 38.6 Turn-Off Fall Time t F 11.2 Reverse Recovery Time t ns RR I = 1.5A, di/dt = 100A/s F 22.9 Reverse Recovery Charge nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT2004UFV May 2018 Diodes Incorporated www.diodes.com Document number: DS40671 Rev. 2 - 2